Searched for: subject%3A%22Silicon%22
(1 - 8 of 8)
document
Yao, Z. (author), Yang, G. (author), Han, C. (author), Procel Moya, P.A. (author), Özkol, E. (author), Yan, J. (author), Zhao, Y. (author), Cao, L. (author), van Swaaij, R.A.C.M.M. (author), Mazzarella, L. (author), Isabella, O. (author)
Passivating contacts are crucial for realizing high-performance crystalline silicon solar cells. Herein, contact formation by plasma-enhanced chemical vapor deposition (PECVD) followed by an annealing step is focused on. Poly-SiO<sub>x</sub> passivating contacts by combining plasma-assisted N<sub>2</sub>O-based oxidation of silicon (PANO-SiO...
journal article 2023
document
Cao, L. (author), Procel Moya, P.A. (author), Alcañiz Moya, A. (author), Yan, J. (author), Tichelaar, F.D. (author), Özkol, E. (author), Zhao, Y. (author), Han, C. (author), Yang, G. (author), Yao, Z. (author), Zeman, M. (author), Santbergen, R. (author), Mazzarella, L. (author), Isabella, O. (author)
Thin films of transition metal oxides such as molybdenum oxide (MoO<sub>x</sub>) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoO<sub>x</sub> layers must be mastered to obtain an efficient hole...
journal article 2022
document
Cai, Miao (author), Liang, Yonghu (author), Yun, Minghui (author), Chen, Xuan-You (author), Yan, Haidong (author), Yu, Zhaozhe (author), Yang, Daoguo (author), Zhang, Kouchi (author)
A novel silicone rubber elastic key (SREK) is proposed in this paper for surface mounting technology (SMT) applications. Effects of thermal reflowing stress on the mechanical properties of SMT-SREKs are investigated. The manufactured SMT-SREKs, which underwent various reflowing conditions in advance, are subjected to pressing force and...
journal article 2019
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Hou, Fuhua (author), Han, C. (author), Isabella, O. (author), Yan, Lingling (author), Shi, Biao (author), Chen, Junfan (author), An, Sichong (author), Zeman, M. (author)
Perovskite/silicon tandem solar cells (TSCs) have the potential to achieve power conversion efficiency exceeding 30%. To be compatible with high-efficiency solution-deposited perovskite top cell, a planar front surface for silicon bottom cell is generally required. However, flat front surfaces result in large light reflection losses and thus...
journal article 2019
document
Tan, H. (author), Sivec, L. (author), Yan, B. (author), Santbergen, R. (author), Zeman, M. (author), Smets, A.H.M. (author)
We show experimentally that the photocurrent of thin-film hydrogenated microcrystalline silicon (?c-Si:H) solar cells can be enhanced by 4.5?mA/cm2 with a plasmonic back reflector (BR). The light trapping performance is improved using plasmonic BR with broader angular scattering and lower parasitic absorption loss through tuning the size of...
journal article 2013
document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
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Yan, B. (author), Pham, H.T.M. (author), Ma, Y. (author), Zhuang, Y. (author), Sarro, P.M. (author)
The authors demonstrate a method for the fabrication of in situ ultrathin porous anodic aluminum oxide layers (aspect ratio<2:1) on Si, which can be directly used as templates for nanodot preparation and for pattern transfer. The regular shape of the aluminum oxide pores is maintained even when the thickness of the aluminum oxide template is...
journal article 2007
document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...
journal article 2006
Searched for: subject%3A%22Silicon%22
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