IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive and time-consuming nanolithography such as E...

Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...

Noise temperature and beam pattern of an NbN hot electron bolometer mixer at 5.25 THz

We report the measured sensitivities of a superconducting NbN hot electron bolometer (HEB) heterodyne receiver at 5.25 THz. Terahertz (THz) radiation is quasioptically coupled to a HEB mixer with a lens and a spiral antenna. Using a measurement setup with black body calibration sources and a beam splitter in vacuo, and an antireflection coated...

Contribution of dielectrics to frequency and noise of NbTiN superconducting resonators

We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is...