Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model

In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively....