A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20× less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is...

A CMOS Temperature Sensor with a 49fJ·K2 Resolution FoM

This paper presents the most energy-efficient CMOS temperature sensor ever reported, with a resolution FoM of 49fJ·K2, 2.7× better than the state-of-the-art. It consists of a Wheatstone bridge made from poly-silicon resistors, which is readout by a 2nd-order Continuous-Time Delta-Sigma modulator (CTDSM). This approach leads to a high resolution ...

In Situ  Failure Detection of Electronic Control Units Using Piezoresistive Stress Sensor

Recent advancements in automotive technologies, most notably autonomous driving, demand electronic systems much more complex than those realized in the past. The automotive industry has been forced to adopt advanced consumer electronics to satisfy the demand, and thus it becomes more challenging to assess system reliability while adopting the...

A phase-domain readout circuit for a CMOS-compatible thermal-conductivity-based carbon dioxide sensor

The measurement of carbon-dioxide (CO2) concentration is very important in home and building automation, e.g. to control ventilation in energy-efficient buildings. This application requires compact, low-cost sensors that can measure CO₂ concentration with a resolution of <200 ppm over a 2500ppm range. Conventional optical (NDIR...

A 0.53pJK27000μm2resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub...

A ±4A high-side current sensor with 25V input CM range and 0.9% gain error from -40°C to 85°C using an analog temperature compensation technique

This paper presents a fully integrated ±4A current sensor that supports a 25V input common-mode voltage range (CMVR) while operating from a single 1.5V supply. It consists of an on-chip metal shunt, a beyond-the-rails ADC [1] and a temperature-dependent voltage reference. The beyond-the-rails ADC facilitates high-side current sensing without...

A 0.12mm² Wien-Bridge Temperature Sensor with 0.1°C (3σ) Inaccuracy from -40°C to 180°C

Resistor-based temperature sensors can achieve much higher resolution and energy efficiency than conventional BJT-based sensors [1], but they typically occupy more area (> 0.25 mm ² ) and have lower operating temperatures (le 125 {circ} {C}) [2]-[4]. This work describes a 0.12mm ² resistor-based sensor that uses a...

A Wheatstone Bridge Temperature Sensor with a Resolution FoM of 20fJ.K ²

Temperature sensors intended for embedded applications should be both energy-and area-efficient. The combination of Wheatstone-bridge (WhB) sensors and continuous-time ADCs has proven to be highly energy efficient [1], [2]. However, their area (> 0.25 mm{2}) is still larger than that of comparable BJT-based sensors [3], [4]. This paper...

A CMOS-Imager-Pixel-Based Temperature Sensor for Dark Current Compensation

This brief proposes employing each of the classical 4 transistor (4T) pinned photodiode (PPD) CMOS image sensor (CIS) pixels, for both imaging and temperature measurement, intended for compensating the CISs' dark current, and dark signal non-uniformity (DSNU). The proposed temperature sensors rely on the thermal behavior of MOSFETs working in...

A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology

In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...

A micro graphene high temperature sensor with a single Si₃N₄ protective layer

Temperature sensors are widely used in industrial production, national defense and military fields. The traditional temperature sensors normally operate in a limited temperature range no more than 200 °C, which cannot be used for extreme high temperature detections. In this paper, a thermal protection method for the sensing graphene membrane...

Online Condition Monitoring Methodology for Power Electronics Package Reliability Assessment

This article introduces an online condition monitoring strategy that utilizes a transient heat pulse to detect package thermal performance degradation. The metric employed is the temperature-dependent transient thermal impedance "Zth(t, Tamb)."The proposed methodology offers quantitative insights into package thermal performance degradation...