Low Temperature PureB Technology for CMOS Compatible Photodetectors

In this thesis, conventional high temperature (HT, 700 °C) PureB technology is optimized in order to fabricate detectors with improved key parameters such as the spatial uniformity of the responsivity. A novel technology for low temperature (LT, 400 °C) boron deposition is developed providing a uniform, smooth, closed LT boron layer. This...