Growth of multi-layered graphene on molybdenum catalyst by solid phase reaction with amorphous carbon

A method to grow multi layers graphene (MLG) just by thermal annealing in an inert atmosphere is reported. A molybdenum (Mo) catalyst layer is used in combination with a solid amorphous carbon (a-C) source on top or below the Mo layer. The formation of MLG directly on top of the catalyst substrate surface is confirmed by Raman spectroscopy,...

Low‐Temperature PureB CVD Technology for CMOS Compatible Photodetectors

In this chapter, a new technology for low‐temperature (LT, 400°C) boron deposition is developed, which provides a smooth, uniform, closed LT boron layer. This technology is successfully employed to create near‐ideal LT PureB (pure boron) diodes with low, deep junction‐like saturation currents, allowing full integration of LT PureB photodiodes...

Graphene based piezoresistive pressure sensor

We present a pressure sensor based on the piezoresistive effect of graphene. The sensor is a 100?nm thick, 280??m wide square silicon nitride membrane with graphene meander patterns located on the maximum strain area. The multilayer, polycrystalline graphene was obtained by chemical vapor deposition. Strain in graphene was generated by applying...

Tip-based chemical vapor deposition with a scanning nano-heater

In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely sublimated copper acetylacetonate (Cu(acac)2), argon (Ar...

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...

Positioning Pd catalyst particles for carbon nanotube growth using charge patterns created with a scanning electron microscope

Positioning of charged nanoparticles with the help of charge patterns in an insulator substrate is a known method. However, the creation of charge patterns with a scanning electron microscope for this is relatively new. Here a scanning electron microscope is used for the creation of localized charge patterns in an insulator, while a glowing wire...

Crystal structure and band gap determination of HfO2 thin films

Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by low-loss EELS analysis. The Eg values are then...

Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800?°C) involved in the growth process poses challenging...