Crisp, R.W. (author), Hashemi, Fatemeh S.M. (author), Alkemade, J. (author), Kirkwood, N.R.M. (author), Grimaldi, G. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), van Ommen, J.R. (author), Houtepen, A.J. (author) To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal...
journal article 2020
