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Klaver, A. (author), Nádady, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...journal article 2006
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Van der Kolk, E. (author), Basun, S.A. (author), Imbusch, G.F. (author), Yen, W.M. (author)Electron delocalization processes of optically excited states of Ce3+ impurities in Lu2SiO5 were investigated by means of a temperature and spectrally resolved photoconductivity study. By monitoring separately the strength of the photocurrent resulting from excitation into each of the Ce3+?5d absorption bands, over a broad temperature region,...journal article 2003