Location of lanthanide impurity levels in the III-V semiconductor GaN

Knowledge from lanthanide spectroscopy on wide band gap (6–10?eV) inorganic compounds is used to understand and predict optical and electronic properties of the lanthanides in the III-V semiconductor GaN. For the first time the location of the 4fn ground state energy of each divalent and trivalent lanthanide ion relative to the valence and...

Mechanism of Persistent Luminescence in Eu2+ and Dy3+ Codoped Aluminate and Silicate Compounds

A mechanism of persistent luminescence that was proposed in 1996 for SrAl2O4:Eu2+;Dy3+ has been widely adopted to explain afterglow in many Eu2+ and Dy3+ codoped aluminates and silicates. The mechanism involves the thermally activated release of a hole from Eu2+ in its excited 5d state to the valence band which is subsequently trapped by Dy3+....