Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the...

Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...

Chemical interaction of B4C, B, and C with Mo/Si layered structures

To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer structures for extreme ultraviolet optics. Knowledge about the chemical interaction between B4C and Mo or Si, however is largely lacking. Therefore, the chemical processes during annealing up to 600?°C of a Mo/B4C/Si layered structure have been...

Characterization of pure boron depositions integrated in silicon diodes for nanometer-deep junction applications

Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...

On the surface roughness development of hydrogenated amorphous silicon deposited at low growth rates

The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150–400?°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a removal/densification of a hydrogen-rich layer is suggested to explain the...