Nanoimprinting for high-throughput replication of geometrically precise pillars in fused silica to regulate cell behavior

Developing high-throughput nanopatterning techniques that also allow for precise control over the dimensions of the fabricated features is essential for the study of cell-nanopattern interactions. Here, we developed a process that fulfills both of these criteria. Firstly, we used electron-beam lithography (EBL) to fabricate precisely...

Direct submicron patterning of titanium for bone implants

Recent research evidences the strong modulatory role of controlled submicron and nanoscale topographies on stem cells fate. To harness these physical surface cues for clinical applications, fabrication of nano- and submicron patterns on clinically relevant biomaterials is greatly needed. In this study, an electron beam lithography method for...

Electron beam fabrication of a microfluidic device for studying submicron-scale bacteria

Background: Controlled restriction of cellular movement using microfluidics allows one to study individual cells to gain insight into aspects of their physiology and behaviour. For example, the use of micron-sized growth channels that confine individual Escherichia coli has yielded novel insights into cell growth and death. To extend this...

Position-controlled [100] InP nanowire arrays

We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different...

Parallel electron-beam-induced deposition using a multi-beam scanning electron microscope

Lithography techniques based on electron-beam-induced processes are inherently slow compared to light lithography techniques. The authors demonstrate here that the throughput can be enhanced by a factor of 196 by using a scanning electron microscope equipped with a multibeam electron source. Using electron-beam induced deposition with MeCpPtMe3...

Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si

This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern,...

Sub-10 nm resolution Electron Beam Lithography in ultrathin HSQ resist layers

The continuous shrinking of the feature size forces scientists and engineers to develop new lithographic techniques and suitable materials which can meet the requirements of the market. Despite its low throughput, EBL remains the number one candidate when writing very small structures. Achieving ultimate resolution with EBL requires not only a...

Transformation of polycrystalline tungsten to monocrystalline tungsten W(100) and its potential application in Schottky emitters

The electron sources in electron microscopes and electron lithography machines often consist of small diameter W(100) wires, etched to form a sharp tip. The electron emission is facilitated by the Schottky effect, thus the name Schottky emitter. The authors are investigating the feasibility of arrays of such electron emitters for the use in...

Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated...

Mapper: High troughput maskless lithography

MAPPER Lithography is developing a maskless lithography technology. The technology combines massively-parallel electron-beam writing with high speed optical data transport used in the telecommunication industry. The electron optics generates 13,000 electron beams that are focused on the wafer by electrostatic lens arrays which are manufactured...

Sub-10 nm focused electron beam induced deposition

Work started with a critical review of literature from the past 70-odd years. The review shows that the physical processes occurring in EBID are generally well understood. By combining models for electron scattering in a solid and electron beam induced heating and knowledge of growth regimes, the majority of the experimental results was...

High-dose exposure of silicon in electron beam lithography

Nanometer-spaced electrodes with calibrated separation

We have fabricated pairs of platinum electrodes with separation between 20 and 3.5 nm. Our technique combines electron beam lithography and chemical electrodeposition. We show that the measurement of the conductance between the two electrodes through the electrolyte provides an accurate and reproducible way to control their separation. We have...