A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 ∘ C (3 σ ) From − 55 ∘ C to 125 ∘ C

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capacitors to the supply voltage and then discharging...

Power-Efficiency Evolution of Capacitive Sensor Interfaces

Recent years have witnessed an improvement in the energy efficiency of capacitive sensor interfaces by more than three orders of magnitude. This article reviews the architectural and circuit innovations that have contributed to this progress. The fundamental limit on the energy consumption of capacitive sensor interfaces is discussed, as well...

An energy-efficient capacitively biased diode-based temperature sensor in 55-nm CMOS

This work presents an energy-efficient diode-based CMOS temperature sensor. It is based on the capacitively biased diode (CBD) working principle and can operate with a 1-V supply voltage. Instead of using a separate CBD front-end and ADC, a new architecture is proposed in which the CBD front-end is directly embedded into the 1st stage of a 1...