A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ± 0.15 ∘ C (3 σ ) From − 55 ∘ C to 125 ∘ C

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capacitors to the supply voltage and then discharging...

Resistor-based Temperature Sensors in CMOS Technology

This thesis describes the design and implementation of integrated temperature sensors based on the temperature dependency of CMOS resistors.

A 10 fJ·K ²Wheatstone Bridge Temperature Sensor with a Tail-Resistor-Linearized OTA

This article describes a highly energy-efficient Wheatstone bridge temperature sensor. To maximize sensitivity, the bridge is made from resistors with positive (silicided diffusion) and negative (poly) temperature coefficients. The bridge is balanced by a resistive (poly) FIR-DAC, which is part of a 2nd-order continuous-time delta-sigma...

A 6.6-μW Wheatstone-Bridge Temperature Sensor for Biomedical Applications

This letter presents a compact, energy-efficient, and low-power Wheatstone-bridge temperature sensor for biomedical applications. To maximize sensitivity and reduce power dissipation, the sensor employs a high-resistance (600 kΩ ) bridge that consists of resistors with positive (silicided-poly) and negative ( n -poly) temperature coefficients...

A 0.25 mm²-Resistor-Based Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) From -55 °C to 125 °C

This paper describes a compact, energy efficient, resistor-based temperature sensor that can operate over a wide temperature range (-55 °C-125 °C). The sensor is based on a Wheatstone bridge (WhB) made from silicided poly-silicon and non-silicided poly-silicon resistors. To achieve both area and energy efficiencies, the current output of the WhB...