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Superconducting Contacts for Atomically Precise Graphene Nanoribbons

Bouwmeester, D. (author)

This dissertation centers around two topics: graphene nanoribbons (GNRs) and superconductors. The aim of this thesis is to work towards combine these two topics, in order to study how superconducting correlations interact with magnetic correlations within graphene nanoribbons, such as the magnetic edge states present in the zigzag edges of...

doctoral thesis 2024

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MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons

Bouwmeester, D. (author), Ghiasi, T.S. (author), Borin Barin, Gabriela (author), Müllen, Klaus (author), Ruffieux, Pascal (author), Fasel, Roman (author), van der Zant, H.S.J. (author)

Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we...

journal article 2023

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Optimized graphene electrodes for contacting graphene nanoribbons

Braun, Oliver (author), Overbeck, Jan (author), El Abbassi, M. (author), Käser, Silvan (author), Furrer, Roman (author), Olziersky, Antonis (author), Flasby, Alexander (author), Borin Barin, Gabriela (author), Perrin, M.L. (author)

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially...

journal article 2021

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Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS₂ Transistor

Lee, Kookjin (author), Choi, Junhee (author), Kaczer, Ben (author), Grill, Alexander (author), Lee, Jae Woo (author), Van Beek, Simon (author), Lee, Jaewoo (author), Shin, D. (author), Lee, S. (author)

In this study, high-performance few-layered ReS₂ field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS₂ FET having a trade-off of performance parameters is optimized using a compact model from analytical...

journal article 2021

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Hard-to-Detect Fault Analysis in FinFET SRAMs

Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)

Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...

journal article 2021

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Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Hou, F. (author), Wang, Qidong (author), Chen, Min (author), Zhang, Kouchi (author), Ferreira, Jan Abraham (author), Wang, Wenbo (author), Ma, R. (author), Su, Meiying (author), Song, Yang (author)

In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermo-mechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100...

journal article 2020

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Investigating Laser-Induced Phase Engineering in MoS₂ Transistors

Papadopoulos, N. (author), Island, J.O. (author), van der Zant, H.S.J. (author), Steele, G.A. (author)

Phase engineering of MoS₂ transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS₂ flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS&#x2082...

journal article 2018

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High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

Molina-Mendoza, Aday J. (author), Island, J.O. (author), Paz, Wendel S. (author), Clamagirand, Jose Manuel (author), Ares, Jose Ramón (author), Flores, Eduardo (author), Leardini, Fabrice (author), Sánchez, Carlos (author), Agraït, Nicolás (author), Rubio-Bollinger, Gabino (author), van der Zant, H.S.J. (author), Ferrer, Isabel J. (author), Palacios, JJ (author), Castellanos-Gomez, Andres (author)

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...

journal article 2017

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InP Nanowire Biosensor with Tailored Biofunctionalization: Ultrasensitive and Highly Selective Disease Biomarker Detection

Janissen, R. (author), Sahoo, Prasana K. (author), Santos, Clelton A. (author), Da Silva, Aldeliane M. (author), Von Zuben, Antonio A.G. (author), Souto, Denio E.P. (author), Costa, Alexandre D.T. (author), Celedon, Paola (author), Zanchin, Nilson I.T. (author), Almeida, Diogo B. (author), Oliveira, Douglas S. (author)

Electrically active field-effect transistors (FET) based biosensors are of paramount importance in life science applications, as they offer direct, fast, and highly sensitive label-free detection capabilities of several biomolecules of specific interest. In this work, we report a detailed investigation on surface functionalization and...

journal article 2017

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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Nishiguchi, K. (author), Castellanos-Gomez, A. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)

We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and p-type Si channel. The tunneling-current...

journal article 2015

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Influence of Conductivity and Dielectric Constant of Water–Dioxane Mixtures on the Electrical Response of SiNW-Based FETs

Mescher, M. (author), Brinkman, A.G.M. (author), Bosma, D. (author), Klootwijk, J.H. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)

In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are...

journal article 2014

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Silicon nanowire-based devices for gas-phase sensing

Cao, A. (author), Sudhölter, E.J.R. (author), De Smet, L.C.P.M. (author)

Since their introduction in 2001, SiNW-based sensor devices have attracted considerable interest as a general platform for ultra-sensitive, electrical detection of biological and chemical species. Most studies focus on detecting, sensing and monitoring analytes in aqueous solution, but the number of studies on sensing gases and vapors using SiNW...

journal article 2013

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Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

Nishiguchi, K. (author), Yamaguchi, H. (author), Fujiwara, A. (author), Van der Zant, H.S.J. (author), Steele, G.A. (author)

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency...

journal article 2013

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Spin torque transistor revisited

Chiba, T. (author), Bauer, G.E.W. (author), Takahashi, S. (author)

We theoretically study the operation of a 4-terminal device consisting of two lateral thin-film spin valves that are coupled by a magnetic insulator such as yttrium iron garnet via the spin transfer torque. By magnetoelectronic circuit theory we calculate the current voltage characteristics and find negative differential resistance and...

journal article 2013

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Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

Buchs, G. (author), Barkelid, K.M. (author), Bagiante, S. (author), Steele, G.A. (author), Zwiller, V. (author)

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed...

journal article 2011

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High Quality SiO2 Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application

Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)

In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...

journal article 2010

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Photoconductance of conjugated materials for organic electronics

Grzegorczyk, W.J. (author)

The photogeneration and mobility of charge carriers in organic thin films, including bulk heterojunctions (BHJs), have been studied with the time resolved microwave photo-conductance technique (TRMC). The TRMC technique allows the electrodeless measurement of the photoconductance with nanosecond time resolution. The research focuses on the way...

doctoral thesis 2010

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Coherent transport through a double donor system in silicon

Verduijn, J. (author), Tettamanzi, G.C. (author), Lansbergen, G.P. (author), Collaert, N. (author), Biesemans, S. (author), Rogge, S. (author)

In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...

journal article 2010

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X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility

Hrauda, N. (author), Zhang, J.J. (author), Stangl, J. (author), Rehman-Khan, A. (author), Bauer, G. (author), Stoffel, M. (author), Schmidt, O.G. (author), Jovanovich, V. (author), Nanver, L.K. (author)

In this work self-organized SiGe islands are used as stressors for Si capping layers, which later act as carrier channels in field effect transistors. To be able to address individual islands and to obtain a sufficiently narrow distribution of their properties, the SiGe islands are grown by molecular beam epitaxy on prepatterned Si substrates,...

journal article 2009

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Electrostatic sensing and electrochemistry with single carbon nanotubes

Heller, I. (author)

This thesis describes the experimental study of devices based on single carbon nanotubes in the context of (bio)sensing in aqueous solutions. Carbon nanotubes are cylindrical molecules of sp2- carbon, about one nanometer in diameter and typically several micrometers long, which have semiconducting or metallic electronic properties. Nanotube...

doctoral thesis 2009