A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies

A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch...

A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS

A 0.14-μ m CMOS 2-D permittivity imaging matrix prototype operating at microwave frequencies is presented. It comprises 25 permittivity-sensing pixels, each consisting of a sensing patch connected to a dedicated RF bridge. A trans-conduct-ance stage converts the imbalance voltage to a current signal, subsequently down-converted to an...