Sensitivity of secondary electron yields and SEM images to scattering parameters in MC simulations

In the simulation of secondary electron yields (SEY) and secondary electron microscopy (SEM) images, there is always the question: are we using the correct scattering cross-sections?. The three scattering processes of interest are quasi-elastic phonon scattering, elastic Mott scattering and inelastic scattering using the dielectric function...

Simulation of shotnoise induced side-wall roughness in electron lithography

We have developed a fast three dimensional Monte-Carlo framework for the investigation of shotnoise induced side-wall roughness (SWR) formation. The calculation outline is demonstrated by an example for an exposure of a 100nm thick layer of negative tone resist (NTR) resist on top of an infinitely thick silicon substrate. We use our home...