Integration of a gate electrode into carbon nanotube devices for scanning tunneling microscopy

We have developed a fabrication process for incorporating a gate electrode into suspended single-walled carbon nanotube structures for scanning tunneling spectroscopy studies. The nanotubes are synthesized by chemical vapor deposition directly on a metal surface. The high temperature (800?°C) involved in the growth process poses challenging...

Scanning tunneling spectroscopy of suspended single-wall carbon nanotubes

We have performed low-temperature scanning tunneling microscopy measurements on single-wall carbon nanotubes that are freely suspended over a trench. The nanotubes were grown by chemical vapor deposition on a Pt substrate with predefined trenches etched into it. Atomic resolution was obtained on the freestanding portions of the nanotubes....

Single-electron tunneling in InP nanowires

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires...