The coherent transduction of information between microwave and optical domains is a fundamental building block for future quantum networks. A promising way to bridge these widely different frequencies is using high-frequency nanomechanical resonators interacting with low-loss optical modes. State-of-the-art optomechanical devices rely on purely dispersive interactions that are enhanced by a large photon population in the cavity. Additionally, one could use dissipative optomechanics, where photons can be scattered directly from a waveguide into a resonator hence increasing the degree of control of the acousto-optic interplay. Hitherto, such dissipative optomechanical interaction was only demonstrated at low mechanical frequencies, precluding prominent applications such as the quantum state transfer between photonic and phononic domains. Here, we show the first dissipative optomechanical system operating in the sideband-resolved regime, where the mechanical frequency is larger than the optical linewidth. Exploring this unprecedented regime, we demonstrate the impact of dissipative optomechanical coupling in reshaping both mechanical and optical spectra. Our figures represent a two-order-of-magnitude leap in the mechanical frequency and a tenfold increase in the dissipative optomechanical coupling rate compared to previous works. Further advances could enable the individual addressing of mechanical modes and help mitigate optical nonlinearities and absorption in optomechanical devices.

We demonstrate dissipative optomechanical transduction and backaction in coupled nanobeams. Compared to previous demonstrations, our system corresponds to a hundredfold increase in mechanical frequency and displays a record-high dissipative optomechanical coupling.

In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling on the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to orientation fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements, reaching a ground state occupancy of 0.25 phonons at mK temperature.