Silicon anisotropy in a bi-dimensional optomechanical cavity

Journal article (2023)

Authors

Cauê M. Kersul University of Campinas
Rodrigo Benevides External organisation
Flávio Moraes University of Campinas
Gabriel H.M. de Aguiar University of Campinas
A. Wallucks Kavli institute of nanoscience Delft, QN/Quantum Nanoscience , QN/Groeblacher Lab - AS
S. Groeblacher Kavli institute of nanoscience Delft, QN/Quantum Nanoscience , QN/Groeblacher Lab - AS
Gustavo S. Wiederhecker University of Campinas
Thiago P. Mayer Alegre University of Campinas
Research Group
QN/Groeblacher Lab (AS) (TU Delft)
Copyright: © 2023 Cauê M. Kersul, Rodrigo Benevides, Flávio Moraes, Gabriel H.M. de Aguiar, A. Wallucks, S. Groeblacher, Gustavo S. Wiederhecker, Thiago P. Mayer Alegre
DOI: https://doi.org/10.1063/5.0135407
More Info
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Published Date

2023

Language

English

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Groeblacher Lab

Abstract

In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling on the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to orientation fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements, reaching a ground state occupancy of 0.25 phonons at mK temperature.