Silicon anisotropy in a bi-dimensional optomechanical cavity
Cauê M. Kersul (University of Campinas)
Rodrigo Benevides (External organisation)
Flávio Moraes (University of Campinas)
Gabriel H.M. de Aguiar (University of Campinas)
A. Wallucks (Kavli institute of nanoscience Delft, TU Delft - QN/Groeblacher Lab, TU Delft - QN/Quantum Nanoscience)
Simon Groblacher (Kavli institute of nanoscience Delft, TU Delft - QN/Groeblacher Lab, TU Delft - QN/Quantum Nanoscience)
Gustavo S. Wiederhecker (University of Campinas)
Thiago P. Mayer Alegre (University of Campinas)
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Abstract
In this work, we study the effects of mechanical anisotropy in a 2D optomechanical crystal geometry. We fabricate and measure devices with different orientations, showing the dependence of the mechanical spectrum and the optomechanical coupling on the relative angle of the device to the crystallography directions of silicon. Our results show that the device orientation strongly affects its mechanical band structure, which makes the devices more susceptible to orientation fabrication imperfections. Finally, we show that our device is compatible with cryogenic measurements, reaching a ground state occupancy of 0.25 phonons at mK temperature.
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