Examples of high-speed harmonic load pull investigations of high-efficiency GaN power transistors

Tomographic measurements of void fraction distributions using a realistic power profile in the DESIRE facility. EVOL-NACUSP-D4d, FIKS-CT-2000-00041.

Tomographic measurements of void fraction distributions in the DESIRE facility. EVOL-NACUSP-D4f, FIKS-CT-2000-00041.