MM
M. Marchetti
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Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
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Provides society information that may include news, reviews or technical notes that should be of interest to practitioners and researchers.
Conference paper
(2020)
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J. van 't Hof, C. De Martino, S. Malotaux, M. Squillante, M. Marchetti, L. Galatro, M. Spirito
In this contribution we present a method for estimating linearity performance of devices operating in the higher millimeter-wave region, under modulated signals and over different loading conditions. The proposed method uses the power dependent vector gain extracted during continuous-wave large signal (load pull) measurements. The EVM prediction capability of the method is benchmarked with experimental load pull data with realistic modulated signals (QAM16) in the 5 GHz (RF) and in the 26 GHz (5G) bands on a 22nm CMOS FD-SOI device. The EVM estimated by the model correlates to the load pull measurements under complex modulated stimulus and properly predicts the best loading condition for linearity. Finally, the proposed method is used to estimate the EVM performance (QAM16) and the optimal loading condition for a 22nm CMOS-SOI device operating in the higher millimeter-wave region, at 165 GHz.
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In this contribution we present a method for estimating linearity performance of devices operating in the higher millimeter-wave region, under modulated signals and over different loading conditions. The proposed method uses the power dependent vector gain extracted during continuous-wave large signal (load pull) measurements. The EVM prediction capability of the method is benchmarked with experimental load pull data with realistic modulated signals (QAM16) in the 5 GHz (RF) and in the 26 GHz (5G) bands on a 22nm CMOS FD-SOI device. The EVM estimated by the model correlates to the load pull measurements under complex modulated stimulus and properly predicts the best loading condition for linearity. Finally, the proposed method is used to estimate the EVM performance (QAM16) and the optimal loading condition for a 22nm CMOS-SOI device operating in the higher millimeter-wave region, at 165 GHz.
A low-cost, highly versatile, pulsed RF - pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.
...
A low-cost, highly versatile, pulsed RF - pulsed I-V isothermal device characterization setup is presented. The realized setup combines a synthetic instrument high dynamic range pulsed network analyzer with pulsed I-V measurements. The resulting configuration facilitates very accurate characterization of low-power as well as high-power devices over a wide range of bias and pulse conditions. The achieved system accuracy is reported, and its measurement capabilities are highlighted through the characterization of self-heating effects in LDMOS devices and silicon-on-glass VDMOS.