The cyan-emitting BaSi2O2N2:Eu2+ phosphor is a promising narrow-band and high-efficiency luminescent material used in wide-color-gamut white light-emitting diodes (wLEDs). However, its serious degradation under thermal attacks hinders its practical applications and needs to be improved. Herein, we proposed to deposit a nano-sized Al2O3 film around each BaSi2O2N2:Eu2+ particle through atomic layer deposition (ALD) in a fluidized bed reactor to improve its thermal stability. Thermal gravimetric analysis results showed that the Al2O3 layer with a thickness of only 11 nm had an obvious anti-oxidization effect, by which the oxidation temperature in air of the Al2O3 coated phosphor was largely increased from ∼550 to ∼750 °C. Moreover, the Al2O3 coated phosphor remained 93% of its luminescence intensity in comparison to 73% of the uncoated one when degraded under water-steam at 200 °C for 24 h. The oxidization of both the BaSi2O2N2 host matrix and the doped Eu2+ ions was reduced by the Al2O3 layer. Meanwhile, the wLEDs fabricated with the Al2O3 coated phosphor showed a luminous flux of 3 times higher than that of the uncoated one when aged under 100 mA for 300 h. The greatly improved thermal degradation property of BaSi2O2N2:Eu2+ phosphor and the reliability of the wLEDs indicate that the ALD approach could be a feasible route to produce uniform and nano layers on phosphors and enhance their stability.@en

A new sialon Eu3.60LiSi13.78Al6.03O6.82N22.59 has been discovered via the single-particle diagnosis approach. Its crystal structure (space group P3m1) was solved and refined from single-crystal X-ray diffraction data. It has the interesting feature of two types of disorder at the Eu2 site: positional disorder (Eu2a/Eu2b) and substitutional disorder with (Si/Al)2(O/N). The structure is generalized to the formula A4-mBnC19+2mX29+m (A = Sr, La, Eu, Ce; B = Li; C = Si, Al; X = O, N; 0 ≤ m ≤ 1; 0 ≤ n ≤ 1), of which Sr3.61LiSi14.27Al5.61O6.19N23.25 (Sr-sialon, m = 0.41, n = 1) and La2.85Sr0.76LiSi14.86Al4.93O2.89N26.51 (LaSr-sialon, m = 0.40, n = 1) are two examples that have been obtained as a single-phase powder. Sr-sialon:Eu and LaSr-sialon:Eu both show blue to yellow emission, depending on the Eu concentration, whereas Sr-sialon:1% Ce shows a deep-blue emission band centered at 422 nm with a full width at half-maximum of 80 nm and an internal quantum efficiency of 80% (λex = 355 nm). The latter phosphor has very good thermal stability of both emission intensity and color. A white light-emitting diode (LED) containing the newly discovered Sr-sialon:5% Ce as the blue phosphor component shows excellent color-rendering indices (Ra = 96 and R12 = 97) with a correlated color temperature of 4255 K. This indicates that Sr-sialon:Ce is a highly promising deep-blue phosphor for illumination grade white LEDs.@en

The β-sialon:Eu2+ phosphor has superior luminescent properties as an excellent green down-conversion material for white light-emitting diodes. To take advantage of its high chromaticity and apply it to field emission displays (FEDs), the drawback of its electron insulation that impedes the electron transmission when excited by e-beam needs to be solved. In this work, a facile method was adopted to coat conductive In2O3 on the surface of β-sialon:Eu2+ phosphor, and the influence of In2O3 coating on the cathodoluminescent properties was investigated. The results show that the In2O3 coating contributes to charge elimination and significantly improves the cathodoluminescence (CL) of β-sialon:Eu2+. Under 19 kV/1.0 nA e-beam excitation, the In2O3 coated sample shows CL intensity about four times higher than that of the uncoated β-sialon:Eu2+. Moreover, no luminescence saturation occurs in coated β-sialon:Eu2+, indicating that the In2O3-coated β-sialon:Eu2+ would be a promising green emissive material for full-color FEDs.@en

Phase pure nondoped and Ce doped La3Si6.5Al1.5N9.5O5.5 (Al containing La N-phase) samples have been obtained by solid-state reaction synthesis for the first time. 1% Ce-doped La3Si6.5Al1.5N9.5O5.5 phosphor displays a broad excitation band ranging from UV to 410 nm, with a maximum at 355 nm. UV light excitation results in a narrow Ce3+ 5d-4f emission band (fwhm = 68 nm) centered at 418 nm. The emission can be tuned from 417 nm at 0.5% Ce to 450 nm at 50% Ce. A high internal quantum efficiency up to 84% is achieved for a 1% Ce doped sample, which has CIE chromaticity coordinates of x = 0.157 and y = 0.069, close to the NTSC blue standard (x = 0.155; y = 0.070). Compared to La3Si8O4N11:Ce phosphor, the quantum efficiency and thermal stability have been enhanced for La3Si6.5Al1.5N9.5O5.5:Ce phosphor without shifting the emission peak wavelength. La3Si6.5Al1.5N9.5O5.5:Ce shows less thermal quenching than La3Si8O4N11:Ce and no shift or change in the shape of emission spectra with increasing the temperature from 4 to 573 K. These results show that La3Si6.5Al1.5N9.5O5.5:Ce is more efficient than any other (oxy-)nitride phosphor with an emission in the short wavelength blue region (400-450 nm). A white LED was fabricated using the La3Si6.5Al1.5N9.5O5.5:5%Ce as a blue phosphor. The high color rendering index (Ra = 93.2, R9 = 91.4, and R12 = 89.5) obtained shows that the phosphor is a very promising conversion phosphor for white LEDs.@en

Phase pure nondoped and Ce doped La3Si6.5Al1.5N9.5O5.5 (Al containing La N-phase) samples have been obtained by solid-state reaction synthesis for the first time. 1% Ce-doped La3Si6.5Al1.5N9.5O5.5 phosphor displays a broad excitation band ranging from UV to 410 nm, with a maximum at 355 nm. UV light excitation results in a narrow Ce3+ 5d-4f emission band (fwhm = 68 nm) centered at 418 nm. The emission can be tuned from 417 nm at 0.5% Ce to 450 nm at 50% Ce. A high internal quantum efficiency up to 84% is achieved for a 1% Ce doped sample, which has CIE chromaticity coordinates of x = 0.157 and y = 0.069, close to the NTSC blue standard (x = 0.155; y = 0.070). Compared to La3Si8O4N11:Ce phosphor, the quantum efficiency and thermal stability have been enhanced for La3Si6.5Al1.5N9.5O5.5:Ce phosphor without shifting the emission peak wavelength. La3Si6.5Al1.5N9.5O5.5:Ce shows less thermal quenching than La3Si8O4N11:Ce and no shift or change in the shape of emission spectra with increasing the temperature from 4 to 573 K. These results show that La3Si6.5Al1.5N9.5O5.5:Ce is more efficient than any other (oxy-)nitride phosphor with an emission in the short wavelength blue region (400-450 nm). A white LED was fabricated using the La3Si6.5Al1.5N9.5O5.5:5%Ce as a blue phosphor. The high color rendering index (Ra = 93.2, R9 = 91.4, and R12 = 89.5) obtained shows that the phosphor is a very promising conversion phosphor for white LEDs.@en

The red-emitting Sr 2 Si 5 N 8 :Eu 2+ phosphor with a superior quantum efficiency and suitable emission spectrum has been widely used as a promising down-conversion material in white light-emitting diodes. However, its thermal degradation under high temperature handicaps its large scale application, and therefore must be reduced. Here, we proposed to increase the thermal stability of Sr 2 Si 5 N 8 :Eu 2+ by coating a nanometer-order Al 2 O 3 film on each phosphor particle using an atomic layer deposition approach in a fluidized bed reactor. The deposited Al 2 O 3 layer was quite uniform and conformal when using O 3 as the oxidizer, and its thickness could be controlled by the dosage type, deposition temperature and cycle numbers, which largely affects the photoluminescence properties and thermal degradation of the title phosphor. Thermal gravimetric analysis results showed that the oxidation temperature of the coated phosphor increased from 700 to 850 °C, suggesting that the coating layer has the function of anti-oxidation. Meanwhile, the coated phosphor particle surface became hydrophobic. Consequently, the thermal degradation of phosphor powders in air at 200 °C was greatly reduced and the stability of the fabricated LEDs with coated powders was also improved. Prospectively, the proposed approach provides a new strategy to improve the thermal stability of other phosphors. @en