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Drain current modulation in a nanoscale field-effect transistor channel by single dopant implantation
Journal article -
B.C. Johnson
,
GC Tettamanzi
,
S. Rogge
,
DN Jamieson
,
A.D.C. alves
,
S Thompson
,
C Yang
,
J. Verduijn
,
J.A. Mol
,
R. Wacquez
,
M. Vinet
,
M. Sanquer