The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch can be used to capitalize on the advantageous features of both semiconductor and materials technologies. In this thesis, a hybrid switch-based inverter designed for the application of Electric Vehicle (EV) traction drive is compared to the conventional inverter assembled with Si-based IGBTs, and SiC-based MOSFETs. According to different standardized driving cycles, Electric Vehicles operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. Collectively, this work shows that the hybrid switch configuration constitutes a good compromise between efficiency and cost when compared to a solution implementing only Si-based IGBT or solely SiC-based MOSFETs.