The modeling of spectral characteristics of light-emitting diodes (LED) has been addressed in various studies. We extend the current state of knowledge by modeling the spectral characteristics of commercially available high-power LEDs, exhibiting a temperature-dependent degradation, by using a different modeling strategy. To this end, the state of the art approach of an additive superposition of probability density functions (PDF) is compared with an unsupervised machine learning approach called non-negative matrix factorization (NMF). The stress test data used in our modeling routine was collected for a period of 6000 hours at four different case temperatures between 55 C and 120 C. The results of the accelerated stress tests indicate a temperature-activated aging process, which can be described using the Arrhenius equation. By combining the Arrhenius equation with the modeling parameters, the spectral characteristics can be modeled for 6000 hours of stress at four different stress test temperatures. The introduced spectral modeling approach using non-negative matrix factorization achieves CIE 1976 UCS chromaticity differences primarily smaller than Δ u'v'≤ 0.001 and proves to be superior to superimposed probability density functions in terms of colorimetric reconstruction accuracy, modeling complexity and robustness against spectral outliers.

We report on the degradation dynamics and mechanisms of commercially available green high-power light-emitting diodes (LEDs) with a peak wavelength of 522 nm. The stress tests were carried out for up to 8800 hours with forward currents ranging from 350 mA to 1000 mA at junction temperatures between 86 C and 155 C. Two complementary test designs were used to isolate temperature- and current-driven effects. The results of the accelerated tests reveal the following key findings: 1.) A square-root-time-dependent loss in the quantum wells caused by the generation of point defects, leading to up to 90 % flux reduction within the first 500 hours at low forward currents. 2.) A logarithmic decay governed by defect-induced carrier-injection loss, evident above I_EQE,max and accompanied by a spectral red shift. 3.) A temperature-activated blue shift with an activation energy of E_a =0.23 eV, indicating the coexistence of competing degradation mechanisms. The interplay between different mechanisms results in an enhanced device lifetime at higher stress temperatures and stands in contrast to previous findings reported in the literature. 4.) The isothermal stress test indicates a cubic acceleration of degradation with carrier density, implicating Auger-Meitner-generated hot electrons in defect formation. These insights provide guidance for mitigating reliability issues of green high-power LEDs in future devices.

We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of 365nm. The stress tests were carried out for a period of 8665 hours with forward currents between 350mA and 700mA and junction temperatures up to 132°C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 °C indicate a decrease in radiant flux between 10-40% varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model's lifetime predictions.

We report on the degradation dynamics and mechanisms of the commercially available chip-on-board (COB) high-power light-emitting diode (LED) modules with an electrical power of 175 W. Due to the associated thermal load, the temperature dependence of the aging processes is additionally analyzed within the scope of this work. The aging tests were performed for a period of 6000 h at four different case temperatures between 55 °C and 120 °C. The results of the accelerated stress tests indicate a temperature-Activated aging process, which severely limits the lifetime of the modules. In addition, the following key findings can be reported: 1) a significant decrease in optical power occurs within 6000 h of operation; 2) depending on the stress test condition the accompanying color shifts exceed a limit of $\Delta {u}\,'{v}\,'={0}.{007}$ ; and 3) the limiting degradation mechanism can be attributed to the package of the device and can be accelerated with temperature, current, and chemicals. Reported findings can be manifested by additional optical material inspections, allowing to use the results for optimizations of future module generations.