AS
A. Sasani
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Resonant ultrafast excitation of infrared-active phonons is a powerful technique with which to control the electronic properties of materials that leads to remarkable phenomena such as the light-induced enhancement of superconductivity1,2, switching of ferroelectric po
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Strain engineering has been extended recently to the picosecond timescales, driving ultrafast metal–insulator phase transitions and the propagation of ultrasonic demagnetization fronts. However, the nonlinear lattice dynamics underpinning interfacial optoelectronic phase switchin
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