Due to significantly lower costs than compound semiconductor counterparts, there is increasing interest in using silicon solar cells for cost-sensitive space missions, particularly in low Earth orbit (LEO). A major concern is, however, that the minority carrier lifetime (lifetime) of silicon solar cells degrades severely under high-energy electron irradiation. Fortunately, thermal and hydrogenation processes can potentially recover all the irradiation losses. This work studies these defects and their recovery using contactless lifetime measurement and deep-level transient spectroscopy (DLTS). Both fired and unfired Ga-doped passivated emitter and rear contact (PERC) solar cell precursors are used in this work. The precursors were irradiated with 1 MeV electrons and annealed at 300 °C and 380 °C, respectively. All the samples exhibited lifetime recovery, with fired samples recovering faster and achieving higher saturated lifetime. After ∼360s of annealing at 380 °C, the irradiated fired samples recovered to their pre-irradiation lifetime, whereas the irradiated non-fired samples required 71.5 times longer (25,740 s). Remarkably, longer annealing caused reductions in lifetime, likely due to surface-related degradation. The DLTS measurements revealed a clear reduction of recombination-active defects after annealing, including V-V⁺ and C_i-C_s in irradiated fired samples and V-V⁺ in irradiated unfired samples. This study demonstrates that the firing process is critical for optimizing the recovery of irradiation damage in silicon solar cells. Hydrogenation of the silicon bulk results in quicker recovery and superior End-of-life performance compared to thermal recovery without hydrogen. Therefore, Ga PERC with bulk hydrogenation can recover radiation-induced damage, rendering it suitable for LEO missions.