In this work we demonstrate that ultra-thin (5 and 15 nm) MgO transmission dynodes with sufficient high transmission electron yield (TEY) can be constructed. These transmission dynodes act as electron amplification stages in a novel vacuum electron multiplier: the Timed Photon Counter. The ultra-thin membranes with a diameter of 30 μm are arranged in a square 64-by-64-array. The TEY was determined with a scanning electron microscope using primary electrons with primary energies of 0.75-5 keV. The method allows a TEY map of the surface to be made while simultaneously imaging the surface. The TEY of individual membranes can be extracted from the TEY map. An averaged maximum TEY of 4.6±0.2 was achieved by using 1.35 keV primary electrons on a TiN/MgO bi-layer membrane with a layer thickness of 2 and 5 nm, respectively. The TiN/MgO membrane with a layer thickness of 2 and 15 nm, respectively, has a maximum TEY of 3.3±0.1 (2.35 keV). Furthermore, the effect of the electric field strength on transmission (secondary) electron emission was investigated by placing the emission surface of a transmission dynode in close proximity to a planar collector. By increasing the electric potential between the transmission dynode and the collector, from -50 V to -100 V, the averaged maximum TEY improved from 4.6±0.2 to 5.0±0.3 at a primary energy of 1.35 keV with an upper limit of 5.5 on one of the membranes.

Large-area transmission dynodes were fabricated by depositing an ultra-thin continuous film on a silicon wafer with a 3-dimensional pattern. After removing the silicon, a corrugated membrane with enhanced mechanical properties was formed. Mechanical metamaterials, such as this corrugated membrane, are engineered to improve its strength and robustness, which allows it to span a larger surface in comparison to flat membranes while the film thickness remains constant. The ultra-thin film consists of three layers (Al₂O₃/TiN/Al₂O₃) and is deposited by atomic layer deposition (ALD). The encapsulated TiN layer provides in-plane conductivity, which is needed to sustain secondary electron emission. Two types of corrugated membranes were fabricated: a hexagonal honeycomb and an octagonal pattern. The latter was designed to match the square pitch of a CMOS pixel chip. The transmission secondary electron yield was determined with a collector-based method using a scanning electron microscope. The highest transmission electron yield was measured on a membrane with an octagonal pattern. A yield of 2.15 was achieved for 3.15 keV incident electrons for an Al₂O₃/TiN/Al₂O₃ tri-layer film with layer thicknesses of 10/5/15 nm. The variation in yield across the surface of the corrugated membrane was determined by constructing a yield map. The active surface for transmission secondary electron emission is near 100%, i.e. a primary electron generates transmission secondary electrons regardless of the point of impact on the corrugated membrane.

The (secondary) electron emission from multilayered Al2O3/TiN membranes has been investigated with a hemispherical collector system in a scanning electron microscope for electrons with energies between 0.3 and 10 keV. These ultra-thin membranes are designed to function as transmission dynodes in novel vacuum electron multipliers. Two different types, a bi-layer and a tri-layer, have been manufactured by means of atomic-layer deposition (ALD) of aluminum oxide and sputtering of titanium nitride. The reflection and transmission electron yield (σR, σT) have been measured for both types of membranes. In comparison, the tri-layer membranes outperformed the bi-layer membranes in terms of transmission electron yield for films with the same effective thickness. The highest transmission electron yield was measured on an Al2O3/TiN/Al2O3 film with layer thicknesses of 5/2.5/5 nm, which had a maximum transmission electron yield {σ T max(E0) of 3.1 (1.55 keV). Furthermore, the bi-layer membranes have been investigated more in-depth by performing an additional measurement using a positive sample bias to separate the transmitted fraction ηT and the transmission secondary electron yield δT. The transmitted fraction was used to determine the transmission parameter p, which characterizes the interaction of primary electrons (PEs) in thin films. The transmission secondary electron yield was used to compare the energy transfer of PEs in films with different thicknesses.

In this work we have developed a prototype gaseous pixel detector by combining a micromegas grid with a Timepix3 chip for the readout. The micromegas foil supported by a matrix of pillars about 50 μm high was manually placed on top the chip. By placing a cathode foil above the chip an ionisation detector was created with a drift gap of 13.5 mm. The Timepix3 chip, thanks to the simultaneous measurement of the time-of-arrival (ToA) and charge via time-over-threshold (ToT) allows corrections to remaining timewalk effects, improving further the position resolution along the drift direction. We present the timewalk correction for Timepix3 chip obtained with real data from a particle beam and its impact on the tracking performance. The results obtained show a significant improvement on the position resolution for single-hits and tracks along the drift direction compared to previous experiments.

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si _x N _y ) and atomic layer deposited alumina (Al₂O₃) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

This study reports on the secondary electron emission (SEE) performance of atomic layer deposited MgO films, with thicknesses in the range from 5 to 25 nm, for the application in the Timed Photon Counter. In this novel, photodetector MgO is utilized as a material for the fabrication of ultrathin transmission dynodes (tynodes). Two different types of PECVD silicon oxide films are applied on top of MgO, in order to protect it against etching steps in the fabrication of tynodes and also as a prevention against aging. Applicability of these two materials as capping films is evaluated in terms of achieved secondary electron yield (SEY) of MgO after their removal. Emission of secondary electrons is known to depend on numerous physical and chemical properties of the material, such as surface roughness and chemical composition. On that account, morphological and structural properties of modified MgO are determined by atomic force microscope and x-ray photoelectron spectrometer and linked to the changes in SEE behavior. The authors demonstrate that the application of a suitable capping layer followed by its removal provides an SEY of 6.6, as opposed to the value of 4.8 recorded from the as-deposited MgO film. Furthermore, in a following experiment, they showed that annealing of MgO films at high temperatures (up to 1100 °C) significantly improved the secondary electron emission, elevating the SEY to 7.2.

In this work we demonstrate how a novel single free electron detector 'Timed Photon Counter' (TiPC) may benefit from ultra-thin MgO transmission dynodes (tynodes). These membranes are fabricated through MEMS process technologies, with atomic layer deposition (ALD) as the most apt technique for growing films of good quality, with excellent control over thicknesses and extremely low surface roughness. Large area arrays of ultra-thin (5-25 nm) free-standing MgO membranes are fabricated and characterized to determine the optimal thickness for application of ALD MgO in TiPC. Supremacy of MgO over other materials previously considered, such as SiN, Al₂O₃, SiC, Si is verified. The exceptional mechanical (low stress in particular, -200 MPa), chemical and electrical properties of MgO make this material a very attractive candidate for numerous MEMS applications, as the MEMS transmission dynodes in the timed photon counter.

By placing, in vacuum, a stack of transmission dynodes (tynodes) on top of a CMOS pixel chip, a single free electron detector could be made with outstanding performance in terms of spatial and time resolution. The essential object is the tynode: an ultra thin membrane, which emits, at the impact of an energetic electron on one side, a multiple of electrons at the other side. The electron yields of tynodes have been calculated by means of GEANT-4 Monte Carlo simulations, applying special low-energy extensions. The results are in line with another simulation based on a continuous charge-diffusion model. By means of Micro Electro Mechanical System (MEMS) technology, tynodes and test samples have been realized. The secondary electron yield of several samples has been measured in three different setups. Finally, several possibilities to improve the yield are presented.