In this study, the edge passivation effectiveness and long-term stability of Nafion polymer in n-type interdigitated back contact (IBC) solar cells are investigated. For new module technologies such as half-cut, triple-cut, or shingled modules, cutting of the cells introduces unpassivated edges with a high recombination rate and this limits the module power. These cut edges can be “repassivated” after cutting and in this work Nafion polymer is used to achieve this. First, different edge types, namely emitter edges (n+/n/p+) and back surface field (BSF) edges (n+/n/n+), as well as different cutting techniques such as laser cut and cleave (L&C), thermal laser separation (TLS), and mechanical cleaving are evaluated. It is found that TLS and mechanical cleaving enable good repassivation on both BSF and emitter edges. Second, industrial-size IBC solar cells are made to assess the effect of the edge repassivation on performance. On 1/4-cut M2 size IBC cells with two emitter edges, efficiency is improved by over 0.3%abs. However, an efficiency improvement was not observed for similar cells with BSF edges, due to an insufficient passivation at the bulk edges. Last, the real-world stability of the Nafion repassivation is evaluated in industrially relevant module stacks by laminating the repassivated wafers with ethylvinylacetate (EVA) or polyolefin elastomer (POE) encapsulants and then exposing them to industry standard testing of 1000 h under damp heat conditions (85 °C, 85% relative humidity). The tests reveal that the repassivation is stable in EVA encapsulants but not in POE.

The edge recombination losses of crystalline silicon solar cells become significant when they are cut into smaller pieces to be assembled into modules. With the interdigitated pattern of doped p and n regions on the rear side, the interdigitated back contact (IBC) solar cells can be cut through different doped regions. In this study, the cutting losses in IBC solar cells are investigated and various cutting scenarios are studied. Through simulations and experimental measurements, it is found that the cut losses can be reduced by cutting through the back surface field rather than through the emitter. The losses under low light intensity are reduced to an even greater extent. When a 23% cell is cut into 1/3 pieces, the efficiency can be increased by 1.2%rel (cut related losses were improved from 2.0rel to 0.8%rel under standard 1-sun testing conditions, compared to cutting through the emitter. Under low light intensity of 0.25 sun, the improvement is around 2.4%rel. The improvement is mainly due to lower FF losses in the I-V characteristics, and this is further confirmed by Suns-Voc and PL measurements. In the pFF analysis, the additional losses due to laser damage are also observed. This strategy of cutting through the BSF region in IBC solar cells can be quickly adopted in mass production without the need for additional processes or equipment and both module power and energy yield can be increased.