We present a study of the application potential of CdSe nanoplatelets (NPLs), a model system for colloidal 2D materials, as field-controlled emitters. We demonstrate that their emission can be changed by 28% upon application of electrical fields up to 175 kV/cm, a very high modulation depth for field-controlled nanoemitters. From our experimental results we estimate the exciton binding energy in 5.5 monolayer CdSe nanoplatelets to be EB = 170 meV; hence CdSe NPLs exhibit highly robust excitons which are stable even at room temperature. This opens up the possibility to tune the emission and recombination dynamics efficiently by external fields. Our analysis further allows a quantitative discrimination of spectral changes of the emission energy and changes in PL intensity related to broadening of the emission line width as well as changes in the intrinsic radiative rates which are directly connected to the measured changes in the PL decay dynamics. With the developed field-dependent population model treating all occurring field-dependent effects in a global analysis, we are able to quantify, e.g., the ground state exciton transition dipole moment (3.0 × 10-29 Cm) and its polarizability, which determine the radiative rate, as well as the (static) exciton polarizability (8.6 × 10-8 eV cm2/kV2), all in good agreement with theory. Our results show that an efficient field control over the exciton recombination dynamics, emission line width, and emission energy in these nanoparticles is feasible and opens up application potential as field-controlled emitters.@en

Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm2·V-1·s-1 at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics.@en

Trigonal tellurium is a small band gap elemental semiconductor consisting of van der Waals bound one-dimensional helical chains of tellurium atoms. We study the temperature dependence of the charge carrier mobility and recombination pathways in bulk tellurium. Electrons and holes are generated by irradiation of the sample with 3 MeV electrons and detected by time-resolved microwave conductivity measurements. A theoretical model is used to explain the experimental observations for different charge densities and temperatures. Our analysis reveals a high room temperature mobility of 190 ± 20 cm2 V-1 s-1. The mobility is thermally deactivated, suggesting a band-like transport mechanism. According to our analysis, the charges predominantly recombine via radiative recombination with a radiative yield close to 98%, even at room temperature. The remaining charges recombine by either trap-assisted (Shockley-Read-Hall) recombination or undergo trapping to deep traps. The high mobility, near-unity radiative yield, and possibility of large-scale production of atomic wires by liquid exfoliation make Te of high potential for next-generation nanoelectronic and optoelectronic applications, including far-infrared detectors and lasers.@en

We show that black phosphorus is a highly efficient infrared emitter. To study the carrier dynamics, excess electron-hole pairs were generated in bulk black phosphorus by irradiation with 3 MeV electron pulses. The transient microwave conductivity due to excess charges was measured as a function of time for different initial charge densities at temperatures in the range 203-373 K. A new global analysis scheme, including the treatment of intrinsic carriers, is provided, which shows that the recombination dynamics in black phosphorus, a low bandgap semiconductor, is strongly influenced by the presence of intrinsic carriers. The temperature dependence of the charge mobility and charge carrier decay via second-order radiative recombination is obtained from modeling of the experimental data. The combined electron and hole mobility was found to increase with temperature up to 250 K and decrease above that. Auger recombination is negligible for the studied densities of excess electron-hole pairs up to 2.5 × 1017 cm-3. For this density the major fraction of the excess electrons and holes undergoes radiative recombination. It is further inferred that for excess charge densities of the order of 1018 cm-3 electrons and holes recombine with near unity radiative yield. The latter offers promising prospects for use of black phosphorus as efficient mid infrared emitter in devices.@en