Na 1/2Bi 1/2TiO 3-based materials have been earmarked for one of the first large-volume applications of lead-free piezoceramics in high-power ultrasonics. Zn 2+-doping is demonstrated as a viable route to enhance the thermal depolarization temperature and electromechanically harden (1-y)Na 1/2Bi 1/2TiO 3-yBaTiO 3 (NBT100yBT) with a maximum achievable operating temperature of 150 °C and mechanical quality factor of 627 for 1 mole % Zn 2+-doped NBT6BT. Although quenching from sintering temperatures has been recently touted to enhance T F-R, with quenching the doped compositions featuring an additional increase in T F-R by 17 °C, it exhibits negligible effect on the electromechanical properties. The effect is rationalized considering the missing influence on conductivity and therefore, negligible changes in the defect chemistry upon quenching. High-resolution diffraction indicates that Zn 2+-doped samples favor the tetragonal phase with enhanced lattice distortion, further corroborated by 23Na Nuclear Magnetic Resonance investigations. @en

Unlike metals where dislocations carry strain singularity but no charge, dislocations in oxide ceramics are characterized by both a strain field and a local charge with a compensating charge envelope. Oxide ceramics with their deliberate engineering and manipulation are pivotal in numerous modern technologies such as semiconductors, superconductors, solar cells, and ferroics. Dislocations facilitate plastic deformation in metals and lead to a monotonous increase in the strength of metallic materials in accordance with the widely recognized Taylor hardening law. However, achieving the objective of tailoring the functionality of oxide ceramics by dislocation density still remains elusive. Here a strategy to imprint dislocations with {100}<100> slip systems and a tenfold change in dislocation density of BaTiO3 single crystals using high-temperature uniaxial compression are reported. Through a dislocation density-based approach, dielectric permittivity, converse piezoelectric coefficient, and alternating current conductivity are tailored, exhibiting a peak at medium dislocation density. Combined with phase-field simulations and domain wall potential energy analyses, the dislocation-density-based design in bulk ferroelectrics is mechanistically rationalized. These findings may provide a new dimension for employing plastic strain engineering to tune the electrical properties of ferroics, potentially paving the way for advancing dislocation technology in functional ceramics.@en

Unlike metals where dislocations carry strain singularity but no charge, dislocations in oxide ceramics are characterized by both a strain field and a local charge with a compensating charge envelope. Oxide ceramics with their deliberate engineering and manipulation are pivotal in numerous modern technologies such as semiconductors, superconductors, solar cells, and ferroics. Dislocations facilitate plastic deformation in metals and lead to a monotonous increase in the strength of metallic materials in accordance with the widely recognized Taylor hardening law. However, achieving the objective of tailoring the functionality of oxide ceramics by dislocation density still remains elusive. Here a strategy to imprint dislocations with {100}<100> slip systems and a tenfold change in dislocation density of BaTiO3 single crystals using high-temperature uniaxial compression are reported. Through a dislocation density-based approach, dielectric permittivity, converse piezoelectric coefficient, and alternating current conductivity are tailored, exhibiting a peak at medium dislocation density. Combined with phase-field simulations and domain wall potential energy analyses, the dislocation-density-based design in bulk ferroelectrics is mechanistically rationalized. These findings may provide a new dimension for employing plastic strain engineering to tune the electrical properties of ferroics, potentially paving the way for advancing dislocation technology in functional ceramics.@en

Dislocations are usually expected to degrade electrical, thermal and optical functionality and to tune mechanical properties of materials. Here, we demonstrate a general framework for the control of dislocation–domain wall interactions in ferroics, employing an imprinted dislocation network. Anisotropic dielectric and electromechanical properties are engineered in barium titanate crystals via well-controlled line-plane relationships, culminating in extraordinary and stable large-signal dielectric permittivity (≈23100) and piezoelectric coefficient (≈2470 pm V–1). In contrast, a related increase in properties utilizing point-plane relation prompts a dramatic cyclic degradation. Observed dielectric and piezoelectric properties are rationalized using transmission electron microscopy and time- and cycle-dependent nuclear magnetic resonance paired with X-ray diffraction. Succinct mechanistic understanding is provided by phase-field simulations and driving force calculations of the described dislocation–domain wall interactions. Our 1D-2D defect approach offers a fertile ground for tailoring functionality in a wide range of functional material systems.@en

The pinning-controlled mobility of ferroelectric/ferroelastic domain walls is an important part of managing polarization switching and determining the final properties of ferroelectric and piezoelectric materials. Here, we assess the impact of temperature on dislocation-induced domain wall pinning as well as on dislocation-tuned dielectric and piezoelectric response in barium titanate single crystals. Our solid-state nuclear magnetic resonance spectroscopy results indicate that the entire sample exclusively permits in-plane domains, with their distribution remaining insensitive to temperature changes below the Curie temperature (TC). The domain wall pinning field monotonically decreases with increasing temperature up to TC, as evidenced by a combination of experimental observations and phase-field simulations. Our work highlights the promising potential of dislocation engineering in controlling domain wall mobility within bulk ferroelectrics.@en