Anisotropic dislocation-domain wall interactions in ferroelectrics
Fangping Zhuo (Technische Universität Darmstadt)
Xiandong Zhou (Technische Universität Darmstadt)
Shuang Gao (Southwest Jiaotong University, Technische Universität Darmstadt)
Marion Höfling (Technical University of Denmark (DTU))
P. Braga Groszewicz (TU Delft - RST/Storage of Electrochemical Energy)
Lovro Fulanović (Technische Universität Darmstadt)
Xiaoli Tan (Iowa State University)
Jurij Koruza (Graz University of Technology)
Dragan Damjanovic (École Polytechnique Fédérale de Lausanne)
Jürgen Rödel (Technische Universität Darmstadt)
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Abstract
Dislocations are usually expected to degrade electrical, thermal and optical functionality and to tune mechanical properties of materials. Here, we demonstrate a general framework for the control of dislocation–domain wall interactions in ferroics, employing an imprinted dislocation network. Anisotropic dielectric and electromechanical properties are engineered in barium titanate crystals via well-controlled line-plane relationships, culminating in extraordinary and stable large-signal dielectric permittivity (≈23100) and piezoelectric coefficient (≈2470 pm V–1). In contrast, a related increase in properties utilizing point-plane relation prompts a dramatic cyclic degradation. Observed dielectric and piezoelectric properties are rationalized using transmission electron microscopy and time- and cycle-dependent nuclear magnetic resonance paired with X-ray diffraction. Succinct mechanistic understanding is provided by phase-field simulations and driving force calculations of the described dislocation–domain wall interactions. Our 1D-2D defect approach offers a fertile ground for tailoring functionality in a wide range of functional material systems.
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