We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.

We have performed a range of in situ heating experiments of polycrystalline Bi films of 22-25 nm-thickness in a transmission electron microscope (TEM). This shows that it is possible to locally transform a polycrystalline thin film into a [111]-oriented single-crystalline film, whereby the unique feature is that the original thickness of the film is maintained, and the substrate used in our experiments is amorphous. The single-crystalline areas have been created by heating the Bi film to temperatures close to the melting temperature with additional heating by focusing of the electron beam (e-beam), which results in local melting of the film. The film does not collapse by dewetting, and upon subsequent cooling, the film transforms into a single-crystalline [111] oriented area. The observed phenomenon is attributed to the presence of a thin Bi-oxide layer on top of Bi film. We show that removal of the Bi-oxide layer by heating the film in a H₂ gas atmosphere results in changes in the Bi film thickness and dewetting upon in situ heating in the TEM.