We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH-etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices.

We have performed a range of in situ heating experiments of polycrystalline Bi films of 22-25 nm-thickness in a transmission electron microscope (TEM). This shows that it is possible to locally transform a polycrystalline thin film into a [111]-oriented single-crystalline film, whereby the unique feature is that the original thickness of the film is maintained, and the substrate used in our experiments is amorphous. The single-crystalline areas have been created by heating the Bi film to temperatures close to the melting temperature with additional heating by focusing of the electron beam (e-beam), which results in local melting of the film. The film does not collapse by dewetting, and upon subsequent cooling, the film transforms into a single-crystalline [111] oriented area. The observed phenomenon is attributed to the presence of a thin Bi-oxide layer on top of Bi film. We show that removal of the Bi-oxide layer by heating the film in a H₂ gas atmosphere results in changes in the Bi film thickness and dewetting upon in situ heating in the TEM.

The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.