Porous glasses produced through melt-quenching of some selective metal organic frameworks like Zeolitic Imidazolate Framework-62 (ZIF-62) and ZIF-4 belong to the advanced functional materials because of their inherent porosity, ease of processing, high gas adsorption capacity and gas separation selectivity. We have delineated thermal induced modifications in the porosity features (pore size, size-distribution and pore density) of crystalline ZIF-62 from room temperature (RT) to its melt-state (> melting point, T_m) followed by its quenching, back to RT, carrying out the depth sensitive positron annihilation lifetime spectroscopy (PALS) measurements in-situ at varying temperatures (RT−T_m). On heating under vacuum, the pores' size as well as size-distribution of crystalline ZIF-62 increases up to ∼473 K as a consequence of removal of entrapped solvent molecules and nonuniform thermal expansion. At higher temperatures (∼473 −573 K), a reduction in pores’ size and size-distribution is observed due to the loss of long range ordering and volume collapse. On melting, ZIF-62 turns into a porous liquid having ∼1.4 times larger pores compared to its crystalline form. The quenching of this porous melt is fully irreversible, and results in the formation of a porous glass having the pores larger than its crystalline counterpart. The in-situ PALS investigation provides the first experimental evidence of inherent porosity in ZIF-62 melt existing at high temperature that has been predicted before through molecular dynamics simulation of the ZIFs-based melts.

The layered structure of MAX phases is associated with a number of functional properties and is the subject of extensive research. While the unit-cell layers of these structures have been well studied, much less is known about the distribution and manipulation of point defects within them. Here, we selected the prototype Cr₂AlC system and, using variable energy positron beams, observed Doppler broadening and positron annihilation lifetimes to track the evolution of defects caused by the penetration of energetic transition metal ions (Co⁺ and Mn⁺) and noble gas ions (Ar⁺ and Ne⁺). In all cases an overall reduction of the open-volume defect concentration is observed post-irradiation. Atomic displacements induced by the penetrating ions drastically modify the defect distribution: the concentration of agglomerates of 9–15 vacancies (corresponding to positron lifetimes of 335–450 ps) in the precursor [Cr₂C/Al]n layers is suppressed, whereas Al mono- and Al-Cr di-vacancy (lifetimes 217–231 ps) concentrations are enhanced. This breakdown of large defects into point defects scales with atomic displacements and is largely independent of the penetrating ion species, providing insights into the manipulation of point defects in nano-layered systems.

This study investigates the ion irradiation induced phase transition in gallium oxide (Ga2O3) from the 𝜷 to the 𝜸 phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mode (RBS/c), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS), and variable energy positron annihilation lifetime spectroscopy (VEPALS) supported by density functional theory (DFT) calculations, defects at all the relevant stages of the phase transition are characterized. A reduction in backscattering yield is observed in RBS/c spectra after the transition to the 𝜸 phase. This goes hand in hand with a significant decrease in the positron trapping center density due to generation of embedded vacancies intrinsic for the 𝜸–Ga2O3 but too shallow in order to trap positrons. A comparison of the observed positron lifetime of 𝜸–Ga2O3 with different theoretical models shows good agreement with the three-site 𝜸 phase approach. A characteristic increase in the effective positron diffusion length and the positron lifetime at the transition point from 𝜷–Ga2O3 to 𝜸–Ga2O3 enables visualization of the phase transition with positrons for the first time.Moreover, a subsequent reduction of these quantities with increasing irradiation fluence is observed, which attributes to further evolution of the 𝜸–Ga2O3 and changes in the gallium vacancy density as well as relative occupation in the crystal lattice.

Grasping (electronic) structure changes during photochromic processes is crucial for fully understanding the photochromic effect in rare-earth oxyhydride films. In this study, we employ in situ UV illumination positron annihilation lifetime spectroscopy (PALS) to investigate the time evolution of open-volume defects and metallic domains during photodarkening and bleaching in yttrium oxyhydride films. The PALS depth profiles before and after a photodarkening-bleaching cycle reveal a light-induced increase in open-volume defects, that occurs homogeneously throughout the oxyhydride layer. The time-dependent PALS measurements show that upon photodarkening, a fast initial formation of metallic domains occurs, as well as a fast release of loosely bounded hydrogen from vacancy clusters and nanopores. During further photodarkening, the concentration of divacancy-like defects gradually increases due to the aggregation of light-induced hydrogen vacancies with preexisting yttrium monovacancies. After the UV illumination is stopped, two subsequent bleaching phases are observed. During the first bleaching phase, a strong correlation between the shortest positron lifetime 𝜏1 and the photochromic contrast is seen in both samples, suggesting that metallic domains disappear and, correspondingly, positron trapping at yttrium monovacancies and divacancy-like defects increases. During the second bleaching phase, a subsequent correlation between 𝜏1 and the photochromic contrast is observed in the more H-rich sample, which is related to the disappearance of larger metallic domains. After bleaching, most of the metallic domains and the photoexcited electrons in the matrix have disappeared, while the formed small vacancy complexes and larger vacancies remain stable. Our PALS study suggests that the formation of metallic domains is the cause of photodarkening, and the formed vacancy defects are important for understanding the memory effect.

The microstructure of Mo was significantly refined by high pressure torsion to verify its irradiation tolerance in comparison with its micrograined counterpart. After deformation microhardness increased from 231 Hv0.2 for a microgarined sample to 542 and 558 Hv0.2, respectively after one and five rotations. Concurrently, the grain refinement was observed, as the grain size decreased with the increase of the deformation degree down to 480 and 110 nm, respectively for one and five rotations. Subsequently, deformed Mo and a micrograined one were irradiated by He ions to the dose of 8 × 10¹⁶/cm ² to verify their potential application as fusion mirrors. Irradiations were followed by reflectivity measurements in the 300–2400 nm range with a dual beam spectrometer. The measurements revealed that the applied dose causes a decrease in total reflectivity of the micrograined sample, whereas the total reflectivity of deformed samples decreases by additional 2.5%. Nanohardness measurements, detailed microscopy observations using focused ion beam and scanning transmission electron microscope as well as positron annihilation spectroscopy investigations were performed to elucidate changes in the microstructure and understand the different mechanisms of bubble creation after irradiation in micrograined and high pressure torsion processed samples.