Palladium hydride is a model system for studying metal-hydrogen interactions. Yet, its bulk electronic structure has proven difficult to directly probe, with most studies to date limited to surface-sensitive photoelectron spectroscopy approaches. This work reports the first in situ ambient-pressure hard X-ray photoelectron spectroscopy (AP-HAXPES) study of hydrogen incorporation in Pd thin films, providing direct access to bulk chemical and electronic information at elevated hydrogen pressures. Structural characterization by in situ X-ray diffraction and neutron reflectometry under comparable conditions establishes a direct correlation between hydrogen loading, lattice expansion, and electronic modifications. Comparison with density functional theory (DFT) reveals how hydrogen stoichiometry and site occupancy govern the density of occupied states near the Fermi level. These results resolve long-standing questions regarding PdH and establish AP-HAXPES as a powerful tool for probing the bulk electronic structure of metal hydrides under realistic conditions.

Thin film metal hydride optical sensors, especially those made from tantalum, offer a large, hysteresis-free hydrogen sensing range, fast response times and great stability. However, due to the shift in tantalum’s hydrogen sensing ranges with rising temperatures, tantalum becomes inadequate for the detection of low hydrogen concentrations (<10+3 ppm) above 200 °C, making it unsuitable for high-temperature applications. We show that the properties of tantalum can be tailored by alloying tantalum with hafnium. Optical transmission measurements, ex situ and in situ X-ray diffraction and X-ray and neutron reflectometry are used to show that the introduction of Hf in Ta results in a solid solution with a stable structure with up to 21% Hf. Alloying Ta with Hf expands the unit cell, which alters the enthalpy of hydrogenation and shifts the sensing range to lower concentrations. Moreover, alloying Ta with Hf improves the sensitivity at low hydrogen concentrations (<10+3 ppm) and for temperatures exceeding 200 °C by about two times compared to pure Ta while preserving its large, hysteresis-free sensing range and excellent stability.