Integration of photonic circuits on silicon offers a unique opportunity to address the scaling of inter- and intra-chip communications in an energy-efficient and cost-effective manner. Mode-division multiplexing (MDM) is deemed as one of the most promising technologies to increase aggregated data bandwidth and avoid a communication capacity crunch. In this invited talk, we review our latest advances on integrated silicon mode multiplexers, including new topologies based on subwavelength grating (SWG) metamaterials for extended broadband operation and higher-order mode support. Specifically, we report on an ultra-broadband multiplexer based on a phase shifter and a multimode interference (MMI) coupler both engineered with subwavelength metamaterials. Experimental measurements of a complete multiplexer-demultiplexer link show losses lower than 2 dB and crosstalk below -17 dB over a bandwidth of 245 nm (1427 – 1672 nm).

On-chip spatial and polarization multiplexing has emerged as a powerful strategy to boost the data transmission capacity of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the optical transmission bandwidth and performance of the devices. To overcome this limitation, a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane is proposed. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. A two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology have been developed. The two-polarization link shows a measured −35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a −20 dB crosstalk bandwidth of 195 nm. These links are used to demonstrate error-free operation (bit-error-rate <10⁻⁹) in multiplexing and demultiplexing of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 and 1.5 dB for the two-polarization and three-mode links, respectively. The approach demonstrated for two polarizations and three modes is transferable to future implementation of more complex multiplexing schemes.

Single quantum emitters embedded in solid-state hosts are an ideal platform for realizing quantum information processors and quantum network nodes. Among the currently investigated candidates, Er3+ ions are particularly appealing due to their 1.5 μm optical transition in the telecom band as well as their long spin coherence times. However, the long lifetimes of the excited state - generally in excess of 1 ms - along with the inhomogeneous broadening of the optical transition result in significant challenges. Photon emission rates are prohibitively small, and different emitters generally create photons with distinct spectra, thereby preventing multiphoton interference - a requirement for building large-scale, multinode quantum networks. Here we solve this challenge by demonstrating for the first time linear Stark tuning of the emission frequency of a single Er3+ ion. Our ions are embedded in a lithium niobate crystal and couple evanescently to a silicon nanophotonic crystal cavity that provides a strong increase of the measured decay rate. By applying an electric field along the crystal c axis, we achieve a Stark tuning greater than the ion's linewidth without changing the single-photon emission statistics of the ion. These results are a key step towards rare earth ion-based quantum networks.