AS
A.J.M. Soede
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Buckminsterfullerene (C60) is often used as the electron transport layer (ETL) in perovskite solar cells (PSCs). At the perovskite/C60 interface, significant non-radiative recombination occurs, causing a mismatch between the open-circuit voltage (VOC) and the quasi-Fermi level splitting (QFLS). It has been reported that an ultra-thin (1 nm) lithium fluoride (LiF) layer at the interface improves the VOC of PSCs, but the exact passivation mechanism of the LiF layer is still up to debate. In this master thesis, the effect of LiF on the properties of the perovskite (PVK) layer and the PVK/C60 interface is investigated. The growth mechanism of LiF is studied with atomic force microscopy (AFM). It was found that LiF grows on the perovskite surface via an island growth mechanism. It was also shown that lowering the evaporation rate significantly improves the coverage. From steady-state microwave conductivity (SSMC) and time-resolved microwave conductivity (TRMC) measurements, it was demonstrated that LiF did not have a beneficial effect on the opto-electronic properties of the perovskite film alone. Further SSMC and TRMC measurements showed that a thin LiF interlayer passivates electron traps at the PVK/C60 interface, thereby reducing non-radiative recombination. This passivation of interfacial defects leads to both an improved QFLS for the PVK/C60 bilayer system and an increased VOC in the fabricated PSCs.
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Buckminsterfullerene (C60) is often used as the electron transport layer (ETL) in perovskite solar cells (PSCs). At the perovskite/C60 interface, significant non-radiative recombination occurs, causing a mismatch between the open-circuit voltage (VOC) and the quasi-Fermi level splitting (QFLS). It has been reported that an ultra-thin (1 nm) lithium fluoride (LiF) layer at the interface improves the VOC of PSCs, but the exact passivation mechanism of the LiF layer is still up to debate. In this master thesis, the effect of LiF on the properties of the perovskite (PVK) layer and the PVK/C60 interface is investigated. The growth mechanism of LiF is studied with atomic force microscopy (AFM). It was found that LiF grows on the perovskite surface via an island growth mechanism. It was also shown that lowering the evaporation rate significantly improves the coverage. From steady-state microwave conductivity (SSMC) and time-resolved microwave conductivity (TRMC) measurements, it was demonstrated that LiF did not have a beneficial effect on the opto-electronic properties of the perovskite film alone. Further SSMC and TRMC measurements showed that a thin LiF interlayer passivates electron traps at the PVK/C60 interface, thereby reducing non-radiative recombination. This passivation of interfacial defects leads to both an improved QFLS for the PVK/C60 bilayer system and an increased VOC in the fabricated PSCs.