JT
Jing Tian
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3 records found
1
Journal article
(2026)
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Zhoudong Yang, Xinyue Wang, Jing Tian, Changran Zheng, Xuyang Yan, Junwei Chen, Yuanhui Zuo, Guoqi Zhang, Jiajie Fan, More Authors
Reliable 4H-SiC for high-power electronics and quantum photonics requires a quantitative understanding of how contact loading drives microstructure evolution and load-bearing/fracture response in epitaxial layers. Here, we integrate instrumented indentation, confocal micro-Raman residual-stress metrology, atomistic molecular dynamics (MD), and high-resolution TEM (HRTEM) to establish processing–microstructure–mechanical property linkages in chemical vapor deposition (CVD) 4H-SiC epilayers. At peak depths of 600–1050 nm, indentation promotes Palmqvist-type radial cracks and the apparent indentation toughness KIC increases from 0.87 ± 0.08 to 1.20 ± 0.05 MPa m1/2 with depth, consistent with plastic-zone growth and dislocation shielding. E2(TO) Raman mapping quantifies an increase in residual stress from ∼302 ± 60 to ∼665 ± 72 MPa. It also shows that the incremental broadening of the FWHM becomes less pronounced beyond ∼750 nm, suggesting that the near-surface disorder indicator within the Raman probe volume approaches a quasi-steady level. MD captures a 4H → 3C phase transformation, amorphization beneath indenter ridges, and dislocation nucleation/growth, which HRTEM directly corroborates. The combined measurement–model–validation closed loop yields a depth-dependent relationship between residual-stress accumulation and apparent toughness, converting them into an actionable processing window: constraining penetration depth below ∼0.75 μm limits residual stress and near-surface disorder. These results provide physics-based guidance for machining and packaging of 4H-SiC epilayers and illustrate a transferable framework for brittle, anisotropic ceramics.
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Reliable 4H-SiC for high-power electronics and quantum photonics requires a quantitative understanding of how contact loading drives microstructure evolution and load-bearing/fracture response in epitaxial layers. Here, we integrate instrumented indentation, confocal micro-Raman residual-stress metrology, atomistic molecular dynamics (MD), and high-resolution TEM (HRTEM) to establish processing–microstructure–mechanical property linkages in chemical vapor deposition (CVD) 4H-SiC epilayers. At peak depths of 600–1050 nm, indentation promotes Palmqvist-type radial cracks and the apparent indentation toughness KIC increases from 0.87 ± 0.08 to 1.20 ± 0.05 MPa m1/2 with depth, consistent with plastic-zone growth and dislocation shielding. E2(TO) Raman mapping quantifies an increase in residual stress from ∼302 ± 60 to ∼665 ± 72 MPa. It also shows that the incremental broadening of the FWHM becomes less pronounced beyond ∼750 nm, suggesting that the near-surface disorder indicator within the Raman probe volume approaches a quasi-steady level. MD captures a 4H → 3C phase transformation, amorphization beneath indenter ridges, and dislocation nucleation/growth, which HRTEM directly corroborates. The combined measurement–model–validation closed loop yields a depth-dependent relationship between residual-stress accumulation and apparent toughness, converting them into an actionable processing window: constraining penetration depth below ∼0.75 μm limits residual stress and near-surface disorder. These results provide physics-based guidance for machining and packaging of 4H-SiC epilayers and illustrate a transferable framework for brittle, anisotropic ceramics.
The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The growth rate and uniformity of epitaxial film are two critical evaluation criteria of epitaxial process. In order to obtain a higher growth rate and more uniform epitaxial film, it is necessary to improve the SiC epitaxial growth process. The traditional method to improve the epitaxial growth process is the “trial and error method”, but this method will consume a lot of time and economic costs. Therefore, it is necessary to find an efficient way to simulate the epitaxial growth process of SiC. This work uses computer aided Multiphysics simulation method to study the growth of SiC epitaxial films in a horizontal hot-wall chemical vapor deposition (CVD) reaction chamber. Firstly, a three-dimensional model of a horizontal hot-wall CVD reaction chamber is established, in which the MTS (methyltrichlorosilane)/H2 is used to deposit SiC epitaxial films on large-area substrates. The effects of temperature, gas flow distribution ratio, and pallet speed on the growth rate and uniformity of SiC epitaxial films are studied. The results show that: 1) In the range of 1500K-1600K, the higher temperature brings the higher growth rate of SiC epitaxial film. 2) The gas flow ratio of three groups of air inlets can simultaneously affect the growth rate and uniformity of the SiC epitaxial film. With the greater the airflow at the middle air inlet, the higher growth rate and the lower film uniformity will be obtained. 3) The tray rotation speed does not affect the film growth rate, but the higher of film uniformity will be achieved under the higher tray rotation speed. The simulation results agree well with the experimental results, which proves that the Multiphysics simulation method is feasible and can be used for further optimization of the epitaxial growth process of SiC.
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The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The growth rate and uniformity of epitaxial film are two critical evaluation criteria of epitaxial process. In order to obtain a higher growth rate and more uniform epitaxial film, it is necessary to improve the SiC epitaxial growth process. The traditional method to improve the epitaxial growth process is the “trial and error method”, but this method will consume a lot of time and economic costs. Therefore, it is necessary to find an efficient way to simulate the epitaxial growth process of SiC. This work uses computer aided Multiphysics simulation method to study the growth of SiC epitaxial films in a horizontal hot-wall chemical vapor deposition (CVD) reaction chamber. Firstly, a three-dimensional model of a horizontal hot-wall CVD reaction chamber is established, in which the MTS (methyltrichlorosilane)/H2 is used to deposit SiC epitaxial films on large-area substrates. The effects of temperature, gas flow distribution ratio, and pallet speed on the growth rate and uniformity of SiC epitaxial films are studied. The results show that: 1) In the range of 1500K-1600K, the higher temperature brings the higher growth rate of SiC epitaxial film. 2) The gas flow ratio of three groups of air inlets can simultaneously affect the growth rate and uniformity of the SiC epitaxial film. With the greater the airflow at the middle air inlet, the higher growth rate and the lower film uniformity will be obtained. 3) The tray rotation speed does not affect the film growth rate, but the higher of film uniformity will be achieved under the higher tray rotation speed. The simulation results agree well with the experimental results, which proves that the Multiphysics simulation method is feasible and can be used for further optimization of the epitaxial growth process of SiC.
The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The distribution of the flow and temperature fields in the reactor chamber influences the epitaxial layer uniformity. Therefore, this study optimizes the distribution of the flow and temperature fields inside the reactor to enhance the quality of the epitaxial layer. COMSOL Multiphysics is used to model the horizontal chemical vapor deposition (CVD) reactor chamber, and the flow and temperature fields inside the reactor chamber are analyzed. Factors influencing the uniformity of flow field distribution include the reactant gas distribution and the gas-inlet tunnel’s diameter and position. The flow field uniformity is represented by the relative standard deviation of the velocity. Parameters impacting the temperature field uniformity include the position and pitch of the heating coil and the graphite column width. The heating efficiency of the substrate and temperature uniformity are expressed by the average temperature and standard deviation of the temperature, respectively. Support vector machine (SVM) is used to establish the relationship between design variables and the objective function, and the multi-objective particle swarm optimization (MOPSO) algorithm is used to optimize the reactor. The proposed approach improves the uniformity of the flow and temperature fields and the heating efficiency of the substrate.
...
The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The distribution of the flow and temperature fields in the reactor chamber influences the epitaxial layer uniformity. Therefore, this study optimizes the distribution of the flow and temperature fields inside the reactor to enhance the quality of the epitaxial layer. COMSOL Multiphysics is used to model the horizontal chemical vapor deposition (CVD) reactor chamber, and the flow and temperature fields inside the reactor chamber are analyzed. Factors influencing the uniformity of flow field distribution include the reactant gas distribution and the gas-inlet tunnel’s diameter and position. The flow field uniformity is represented by the relative standard deviation of the velocity. Parameters impacting the temperature field uniformity include the position and pitch of the heating coil and the graphite column width. The heating efficiency of the substrate and temperature uniformity are expressed by the average temperature and standard deviation of the temperature, respectively. Support vector machine (SVM) is used to establish the relationship between design variables and the objective function, and the multi-objective particle swarm optimization (MOPSO) algorithm is used to optimize the reactor. The proposed approach improves the uniformity of the flow and temperature fields and the heating efficiency of the substrate.