JT

Jing Tian

2 records found

The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The distribution of the flow and temperature fields in the reactor chamber influences the epitaxial layer uniformity. Therefore, this study optimizes the distribution of the flow and temperature ...
The silicon carbide (SiC) epitaxial growth process is crucial in chip manufacturing. The growth rate and uniformity of epitaxial film are two critical evaluation criteria of epitaxial process. In order to obtain a higher growth rate and more uniform epitaxial film, it is necessar ...