The growing demand for wearable devices has sparked a significant interest in ferroelectret films. They possess flexibility and exceptional piezoelectric properties due to strong macroscopic dipoles formed by charges trapped at the interface of their internal cavities. This review of ferroelectrets focuses on the latest progress in fabrication techniques for high temperature resistant ferroelectrets with regular and engineered cavities, strategies for optimizing their piezoelectric performance, and novel applications. The charging mechanisms of bipolar and unipolar ferroelectrets with closed and open-cavity structures are explained first. Next, the preparation and piezoelectric behavior of ferroelectret films with closed, open, and regular cavity structures using various materials are discussed. Three widely used models for predicting the piezoelectric coefficients (d₃₃) are outlined. Methods for enhancing the piezoelectric performance such as optimized cavity design, utilization of fabric electrodes, injection of additional ions, application of DC bias voltage, and synergy of foam structure and ferroelectric effect are illustrated. A variety of applications of ferroelectret films in acoustic devices, wearable monitors, pressure sensors, and energy harvesters are presented. Finally, the future development trends of ferroelectrets toward fabrication and performance optimization are summarized along with its potential for integration with intelligent systems and large-scale preparation.

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Depolarization in ferroelectric materials has been studied since the 1970s, albeit quasi-statically. The dynamics are described by the empirical Merz law, which gives the polarization switching time as a function of electric field, normalized to the so-called activation field. The Merz law has been used for decades; its origin as domain-wall depinning has recently been corroborated by molecular dynamics simulations. Here we experimentally investigate domain-wall depinning by measuring the dynamics of depolarization. We find that the boundary between thermodynamically stable and depolarizing regimes can be described by a single constant, P_r/ε₀ε_ferroE_c. Among different multidomain ferroelectric materials the values of coercive field, E_c, dielectric constant, ε_ferro, and remanent polarization, P_r, vary by orders of magnitude; the value for P_r/ε₀ε_ferroE_c however is comparable, about 15. Using this extracted universal value, we show that the depolarization field is similar to the activation field, which corresponds to the transition from creep to domain-wall flow.

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In this work, the macroscopic polarization of a ferroelectric capacitor is correlated with the local domain morphology. To this end, a ferroelectric capacitor of the random copolymer poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] is poled to a set polarization state in a Sawyer-Tower setup. After chemically removing the top electrode, the exposed ferroelectric is locally probed with piezoresponse force microscopy. The domains without the top electrode are thermodynamically stable for weeks in ambient environment, as proven by comparing the remanent polarization measured before etching away and after re-depositing the top electrode. Out-of-plane PFM phase images show a random distribution of domains with up and down polarity. We unambiguously demonstrate a linear correlation between the mean PFM phase and the macroscopic polarization. As a demonstration of the insights that the global excitation and local probing method can provide, we show how thermal and electrical depoling can result in identical macroscopic polarization yet completely different domain morphologies.

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Poly(vinylidene fluoride) (PVDF) has long been regarded as an ideal piezoelectric ‘plastic’ because it exhibits a large piezoelectric response and a high thermal stability. However, the realization of piezoelectric PVDF elements has proven to be problematic due to, amongst other reasons, the lack of industrially scalable methods to process PVDF into the appropriate polar crystalline forms. Here, we show that fully piezoelectric PVDF films can be produced via a single-step process that exploits the fact that PVDF can be molded at temperatures below its melting temperature, i.e. via solid-stateprocessing. We demonstrate that we thereby produce d-PVDF, the piezoelectric charge coefficient of which is comparable to that of biaxially stretched b-PVDF. We expect that the simplicity and scalability of solid-state processing combined with the excellent piezoelectric properties of our PVDF structures will provide new opportunities for this commodity polymer and will open a range of possibilities for future, large-scale, industrial production of plastic piezoelectric films. @en

Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm 2. @en