Nuclear spins owe their long-lived magnetic states to their excellent isolation from the environment. At the same time, a finite degree of interaction with their surroundings is necessary for reading and writing the spin state. Therefore, detailed knowledge of and control over the atomic environment of a nuclear spin is key to optimizing conditions for quantum information applications. While various platforms enabled single-shot readout of nuclear spins, their direct environments were either unknown or impossible to controllably modify on the atomic scale. Scanning tunneling microscopy (STM), combined with electron spin resonance (ESR), provides atomic-scale information of individual nuclear spins via the hyperfine interaction. Here, we demonstrate single-shot readout of an individual ⁴⁹Ti nuclear spin with an STM. Employing a pulsed measurement scheme, we find its lifetime to be in the order of seconds. Furthermore, we shed light on the pumping and relaxation mechanisms of the nuclear spin by investigating its response to both ESR driving and tunneling current, which is supported by model calculations. These findings give an atomic-scale insight into the nature of nuclear spin relaxation and are relevant for the development of atomically assembled qubit platforms.

Excitons in semiconductors and molecules are widely utilized in photovoltaics and optoelectronics, and high-temperature coherent quantum states of excitons can be realized in artificial electron-hole bilayers and an exotic material of an excitonic insulator (EI). Here, we investigate the band gap evolution of a putative high-temperature EI Ta₂NiSe₅ upon surface doing by alkali adsorbates with angle-resolved photoemission and density functional theory (DFT) calculations. The conduction band of Ta₂NiSe₅ is filled by the charge transfer from alkali adsorbates, and the band gap decreases drastically upon the increase of metallic electron density. Our DFT calculation, however, reveals that there exist both structural and excitonic contributions to the band gap tuned. While electron doping reduces the band gap substantially, it alone is not enough to close the band gap. In contrast, the structural distortion induced by the alkali adsorbate plays a critical role in the gap closure. This work indicates a combined electronic and structural nature for the EI phase of the present system and the complexity of surface doping beyond charge transfer.

Quasi-two-dimensional charge density wave system of 1T-TaS₂ has attracted recent interest due to topological excitations, emergent superconductivity, ultrafast synaptic functionality, and the possibility of a quantum spin liquid state. While electron correlation has been known to be essential in this system, the nature of its insulating phase is currently under debate. Here, we reinvestigate the origin of the insulating band structures of the 1T-TaS₂ surface using density-functional theory calculations to consider the recently-raised issues such as interlayer coupling, surface effect, and interlayer spin ordering. We identify four distinct electronic states of the surface layer such as a 2D Mott phase, a strongly-coupled antiferromagnetic insulator, a weakly-coupled ferromagnetic insulator, and a small-gap semiconductor, depending on types of the surface termination and the interlayer spin configuration. These distinct surface electronic states explain the different sizes of spectroscopic band gaps observed in scanning tunneling microscopy, revealing the complexity of the interlayer charge and spin couplings in layered correlated materials.