RP
Riikka L. Puurunen
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3 records found
1
Atomic Layer Deposition on Particulate Materials from 1988 through 2023
A Quantitative Review of Technologies, Materials, and Applications
Review
(2026)
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Peter M. Piechulla, Mingliang Chen, Aristeidis Goulas, Riikka L. Puurunen, J. Ruud van Ommen
Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends and provide an outlook on prospective developments.
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Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends and provide an outlook on prospective developments.
Journal article
(2026)
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Christine Gonsalves, Jänis Järvilehto, Saeed Saedy, Jorge A. Velasco, Thomas Grehl, Philipp Brüner, Niko Heikkinen, Juha Lehtonen, J. Ruud van Ommen, Riikka L. Puurunen
Uniform material distribution by atomic layer deposition (ALD) inside porous materials is needed in multiple applications, including batteries and catalysis. Attaining this uniformity is not trivial, diffusion within the porous network being one of the main limiting factors. This work used a fluidized bed atmospheric ALD reactor to coat millimeter-size mesoporous alumina spheres with platinum, using the process based on (methylcyclopentadienyl)trimethylplatinum [MeCpPtMe3] and oxygen. Using different exposure times and five reaction cycles, materials with platinum loading up to ∼4 wt% were prepared. The growth per cycle, expressed as average areal number density, was approximately 0.1 Pt atoms per nm2. Cross-sectional analysis done using low-energy ion scattering indicated that with increasing exposure time, platinum distribution evolved from egg-shell to macroscopic uniform distribution through the particles. Diffusion–reaction modeling was done to support the experiments and showed a saturation of the Pt weight loading after uniform distribution. This work shows that it is possible to get a uniform distribution of platinum through mesoporous particles with an aspect ratio on the order of 100 000 : 1, when the ALD process is properly optimized.
...
Uniform material distribution by atomic layer deposition (ALD) inside porous materials is needed in multiple applications, including batteries and catalysis. Attaining this uniformity is not trivial, diffusion within the porous network being one of the main limiting factors. This work used a fluidized bed atmospheric ALD reactor to coat millimeter-size mesoporous alumina spheres with platinum, using the process based on (methylcyclopentadienyl)trimethylplatinum [MeCpPtMe3] and oxygen. Using different exposure times and five reaction cycles, materials with platinum loading up to ∼4 wt% were prepared. The growth per cycle, expressed as average areal number density, was approximately 0.1 Pt atoms per nm2. Cross-sectional analysis done using low-energy ion scattering indicated that with increasing exposure time, platinum distribution evolved from egg-shell to macroscopic uniform distribution through the particles. Diffusion–reaction modeling was done to support the experiments and showed a saturation of the Pt weight loading after uniform distribution. This work shows that it is possible to get a uniform distribution of platinum through mesoporous particles with an aspect ratio on the order of 100 000 : 1, when the ALD process is properly optimized.
Review Article
Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD"
Review
(2017)
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Esko Ahvenniemi, Andrew R. Akbashev, Anjana Devi, Viktor Drozd, Liliya Elnikova, Gloria Gottardi, Kestutis Grigoras, Dennis M. Hausmann, Cheol Seong Hwang, Shih Hui Jen, Tanja Kallio, Jaana Kanervo, Saima Ali, Ivan Khmelnitskiy, Do Han Kim, Lev Klibanov, Yury Koshtyal, A. Outi I Krause, Jakob Kuhs, Irina Kärkkänen, Marja Leena Kääriäinen, Tommi Kääriäinen, Luca Lamagna, Mikhael Bechelany, Adam A. Łapicki, Markku Leskelä, Harri Lipsanen, Jussi Lyytinen, Anatoly Malkov, Anatoly Malygin, Abdelkader Mennad, Christian Militzer, Jyrki Molarius, Małgorzata Norek, Maria Berdova, Çaǧla Özgit-Akgün, Mikhail Panov, Henrik Pedersen, Fabien Piallat, Georgi Popov, Riikka L. Puurunen, Geert Rampelberg, Robin H A Ras, Erwan Rauwel, Fred Roozeboom, Stefan Boyadjiev, Timo Sajavaara, Hossein Salami, Hele Savin, Nathanaelle Schneider, Thomas E. Seidel, Jonas Sundqvist, Dmitry B. Suyatin, Tobias Törndahl, J. Ruud Van Ommen, Claudia Wiemer, David C. Cameron, Oili M E Ylivaara, Oksana Yurkevich, Rong Chen, Mikhail Chubarov, Veronique Cremers
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.
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Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency.