Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Journal Article (2018)
Author(s)

Robert Sokolovskij (Southern University of Science and Technology , TU Delft - Electronic Components, Technology and Materials, State Key Laboratory of Solid State Lighting)

Jian Zhang (Southern University of Science and Technology , Fudan University)

Elina Iervolino (Southern University of Science and Technology )

Changhui Zhao (Southern University of Science and Technology )

Fabio Santagata (TU Delft - Electronic Components, Technology and Materials)

Fei Wang (Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology )

Hongyu Yu (Shenzhen Key Laboratory of the Third Generation Semi-conductor, Southern University of Science and Technology )

Pasqualina M. Sarro (TU Delft - Electronic Components, Technology and Materials)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

DOI related publication
https://doi.org/10.1016/j.snb.2018.08.015 Final published version
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Publication Year
2018
Language
English
Volume number
274
Pages (from-to)
636-644
Downloads counter
378
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Abstract

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

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