A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power

Conference Paper (2016)
Author(s)

Z. Hu (TU Delft - Electrical Engineering, Mathematics and Computer Science, University of Electronic Science and Technology of China)

L.C.N. de Vreede (TU Delft - Electrical Engineering, Mathematics and Computer Science)

M.S. Alavi (TU Delft - Electrical Engineering, Mathematics and Computer Science)

D.A. Calvillo-Cortes (TU Delft - Electrical Engineering, Mathematics and Computer Science, Qualcomm Technologies, Inc.)

R.B. Staszewski (TU Delft - Electrical Engineering, Mathematics and Computer Science)

S. He (University of Electronic Science and Technology of China)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/RFIC.2016.7508287 Final published version
More Info
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Publication Year
2016
Language
English
Research Group
Electronics
Pages (from-to)
206-209
ISBN (print)
978-1-4673-8652-4
ISBN (electronic)
978-1-4673-8651-7
Event
RFIC 2016 (2016-05-22 - 2016-05-24), San Francisco, CA, United States
Downloads counter
222

Abstract

In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.