A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power

Conference paper (2016)

Authors

Z. Hu Electronics - , University of Electronic Science and Technology of China

L.C.N. de Vreede Electronics -

S.M. Alavi Electronics -

D.A. Calvillo Cortes Electronics - , Qualcomm Technologies, Inc.

R.B. Staszewski Electronics -

S. He University of Electronic Science and Technology of China

Research Group

Electronics () (TU Delft)

Chireix combiner CMOS Modulation Loading CMOS integrated circuits Power generation Bandwidth Complementary metal oxide semiconductor CMOS power amplifier Switches Radiofrequency power amplifiers Size 40 nm Class-E Dynamic range RFDAC Digital-analogue conversion Differential amplifiers RFDAC-based outphasing power amplifier ROPA drain Differential quasiload-insensitive class-E branch PA Digital amplitude control word Efficiency 49.2 percent Frequency 5.9 GHz Power back-off Radiofrequency digital-to-analog converter Segmentation technique Word length 3 bit Outphasing power amplifier

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Published Date

2016-5

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

In this paper, we present a fully integrated RFDAC-based outphasing power amplifier (ROPA) in 40-nm CMOS that achieves 22.2 dBm peak output power with 49.2% drain efficiency at 5.9 GHz. It employs differential quasi-load-insensitive Class-E branch PAs that can dynamically be segmented using a 3-bit digital amplitude control word to improve efficiency at power back-off. At 8 dB back-off, this segmentation technique improves the ROPA drain and system efficiency by 5% and 7%, respectively, when compared to a non-segmented approach.