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A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique

Conference Paper (2026)
Author(s)

Heng Ma (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Huajun Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Qinwen Fan (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ISSCC49663.2026.11409178 Final published version
More Info
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Publication Year
2026
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
380-382
Publisher
IEEE
ISBN (electronic)
9798331589363
Event
2026 IEEE International Solid-State Circuits Conference, ISSCC 2026 (2026-02-15 - 2026-02-19), San Francisco, United States
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Abstract

Floating-Gm-based current sensors are effective in rejecting PWM common-mode voltage. But their linearity drops at high voltages due to substrate-current-induced body effect in LDMOS devices. To address this issue, this work introduces a DLL-assisted dynamic body biasing sensor in 0.18μm BCD, improving HD2 by 31dB and THD+N by 14dB. And a peak THD+N of -82.3dB is achieved in the meanwhile. It supports 60V common-mode, rejects PWM up to 2MHz, and enables high-linearity sensing for high power audio and motor-driver systems.

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