Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

Journal article (2016)

Authors

M. van Sebille Photovoltaic Materials and Devices - EEMCS
J.S. Allebrandi Photovoltaic Materials and Devices - EEMCS
J. Quik Photovoltaic Materials and Devices - EEMCS
R.A.C.M.M. van Swaaij Photovoltaic Materials and Devices - EEMCS
F.D. Tichelaar QN/Zandbergen Lab
M. Zeman Electrical Sustainable Energy
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2016 M. van Sebille, J.S. Allebrandi, J. Quik, R.A.C.M.M. van Swaaij, F.D. Tichelaar, M. Zeman
DOI
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https://doi.org/10.1186/s11671-016-1567-6
Stoichiometry Silicon oxide Inter-particle distance Silicon nanocrystal Spacing
More Info
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Published Date

01-12-2016

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.