Charge Transfer and Asymmetric Coupling of MoSe2 Valleys to the Magnetic Order of CrSBr
Caique Serati de Brito (Universidade Federal de São Carlos, Universität Regensburg)
Paulo E. Faria Junior (Universität Regensburg)
Talieh S. Ghiasi (TU Delft - Applied Sciences, Kavli institute of nanoscience Delft)
Josep Ingla-Aynés (Kavli institute of nanoscience Delft, TU Delft - Applied Sciences)
César Ricardo Rabahi (Universidade Federal de São Carlos)
Camila Cavalini (Universidade Federal de São Carlos)
Samuel Mañas-Valero (Kavli institute of nanoscience Delft, TU Delft - Applied Sciences, Universidad de Valencia (ICMol), TU Delft - Applied Sciences)
Takashi Taniguchi (National Institute for Materials Science)
Herre S.J. van der Zant (TU Delft - Applied Sciences, Kavli institute of nanoscience Delft)
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Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.