The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

Zimmermann, L; de Nijs, JMM; Alkemade, PFA; Westerduin, K; van Veen, A.M.

The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

Journal article (1998)

Authors

L Zimmermann External organisation

JMM de Nijs QN/Fysics of NanoElectronics

PFA Alkemade Old - sect Electronic Materials (NS/EM)

K Westerduin External organisation

A.M. van Veen Joining and Mechanical Behavior

Research Group

QN/Fysics of NanoElectronics

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Published Date

1998

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Research Group

QN/Fysics of NanoElectronics

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