The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

Journal article (1998)

Authors

L Zimmermann External organisation
JMM de Nijs QN/Fysics of NanoElectronics
P.F.A. Alkemade Old - sect Electronic Materials (NS/EM)
K Westerduin External organisation
A.M. van Veen Joining and Mechanical Behavior
Research Group
QN/Fysics of NanoElectronics
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Published Date

1998

Language

Undefined/Unknown

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Research Group

QN/Fysics of NanoElectronics