The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

L Zimmermann (External organisation)

JMM de Nijs (TU Delft - QN/Fysics of NanoElectronics)

P.F.A. Alkemade (TU Delft - Old - sect Electronic Materials (NS/EM))

K Westerduin (External organisation)

A.M. van Veen (TU Delft - Joining and Mechanical Behavior)