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JMM de Nijs

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19 records found

Hydrogen-related hole capture and positive charge build up in buried oxides

The behaviour of deuterium incorporated into the buried oxide of SIMOX.

Oxygen related defects in the top silicon layer of SIMOX; the effect of thermal treatments.

NEXT: an experimental effort towards nanoelectronic devices

Improvement of the ITI-p interface in a-Si:H solar cells using a thin SiO intermediate layer

Improvement of the ITI-p interface in a-Si:H solar cells using a thin SiO intermediate layer

The temperature evolution of utra-thin films in solid-phase reaction of Co with Si(111) studied by scanning tunneling microscopy

Positron annihilation as a tool for the study of defects in the MOS system
Journal article - JMM de Nijs, M Clement, H. Schut, A van Veen

Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

Slow states in VUV irradiated MOS capacitors

Analysis of positron beam data by combined use of the shape and wing parameters

Transport of positrons in an electrically biased MOS system

Diffusion, nucleation and annealing of Co on the H-passivated Si(100) surface studied by UHV-STM

De Materialen
Book chapter - JMM de Nijs

Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Journal article - M Clement, JMM de Nijs, H. Schut, A van Veen

Positron beam analysis of semiconductor materials using a two-detector Coppler broadeing coincidence system

Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces.

The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide

NEXT: an experimental effort towards nano-electronic devices.