18 records found
1
Hydrogen-related hole capture and positive charge build up in buried oxides
Oxygen related defects in the top silicon layer of SIMOX; the effect of thermal treatments.
The behaviour of deuterium incorporated into the buried oxide of SIMOX.
Fabrication of Co/Si nanowires by ultrahigh-vacuum scanning tunneling microscopy on hydrogen-passivated Si(100) surfaces.
NEXT: an experimental effort towards nanoelectronic devices
Diffusion, nucleation and annealing of Co on the H-passivated Si(100) surface studied by UHV-STM
NEXT: an experimental effort towards nano-electronic devices.
The temperature evolution of utra-thin films in solid-phase reaction of Co with Si(111) studied by scanning tunneling microscopy
The effect of the silicon top layer of Silicon-Implanted-with-Oxygen on the uptake and release of deuterium by the buried oxide
Transport of positrons in an electrically biased MOS system
Improvement of the ITI-p interface in a-Si:H solar cells using a thin SiO intermediate layer
Positron annihilation as a tool for the study of defects in the MOS system
De Materialen
Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system
Slow states in VUV irradiated MOS capacitors
Analysis of positron beam data by combined use of the shape and wing parameters
