Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons

Journal article (1997)

Authors

M Clement QN/Fysics of NanoElectronics
JMM de Nijs QN/Fysics of NanoElectronics
H. Schut Old - Section Defects in Materials
A van Veen Old - sect Radiation Physics Group (TN/RF)
Research Group
QN/Fysics of NanoElectronics
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Published Date

1997

Language

Undefined/Unknown

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Research Group

QN/Fysics of NanoElectronics