Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Journal Article
(1997)
Author(s)
M Clement (TU Delft - QN/Fysics of NanoElectronics)
JMM de Nijs (TU Delft - QN/Fysics of NanoElectronics)
H. Schut (TU Delft - Old - Section Defects in Materials)
A van Veen (TU Delft - Old - sect Radiation Physics Group (TN/RF))
Research Group
QN/Fysics of NanoElectronics
To reference this document use:
https://resolver.tudelft.nl/uuid:7e74b7dc-6171-4afb-a880-ae0794180c05
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Publication Year
1997
Research Group
QN/Fysics of NanoElectronics
Issue number
257
Volume number
255
Pages (from-to)
718-720
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