Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

Clement, M; de Nijs, JMM; Schut, H.; van Veen, A; Balk, P

Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system

Conference paper (1997)

Authors

M Clement QN/Fysics of NanoElectronics

JMM de Nijs QN/Fysics of NanoElectronics

H. Schut Old - Section Defects in Materials

A van Veen Old - sect Radiation Physics Group (TN/RF)

P Balk External organisation

Research Group

QN/Fysics of NanoElectronics

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Published Date

1997

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Research Group

QN/Fysics of NanoElectronics

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