Positron beam technique for the study of defects at the Si/SiO2 interface of a polysillicon gated MOS system
Conference Paper
(1997)
Author(s)
M Clement (TU Delft - QN/Fysics of NanoElectronics)
JMM de Nijs (TU Delft - QN/Fysics of NanoElectronics)
H. Schut (TU Delft - Old - Section Defects in Materials)
A van Veen (TU Delft - Old - sect Radiation Physics Group (TN/RF))
p Balk (External organisation)
Research Group
QN/Fysics of NanoElectronics
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https://resolver.tudelft.nl/uuid:c9f8509a-6091-463b-9f9b-67aae4e8a604
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Publication Year
1997
Research Group
QN/Fysics of NanoElectronics
Pages (from-to)
143-148
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